TT8M3TR ROHM

1.5V Drive Nch + Pch MOSFET TT8M3 Structure Silicon N-channel MOSFET/ Dimensions (Unit : mm) TSST8 Silicon P-channel MOSFET (8) (7) (6) (5) Features 1) Low On-state resistance. (1) (2) (3) (4) 2) Low voltage drive(1.5V). 3) High power package. Abbreviated symbol :M03 Application Switching Packaging specifications Inner circuit Package Taping (8) (7) (6) (5) Type Code TR (1) Tr1 Source Basic ordering unit (pieces) 3000 (2) Tr1 Gate 2 2 TT8M3 (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain 1 (6) Tr2 Drain (7) Tr1 Drain (1) (2) (3) (4) Absolute maximum ratings (Ta = 25 C) (8) Tr1 Drain 1 ESD PROTECTION DIODE Limits 2 BODY DIODE Parameter Symbol Unit Tr1 : N-ch Tr2 : P-ch Drain-source voltage V 20 20 V DSS Gate-source voltage V 10 10 V GSS Continuous I 2.5 2.4 A D Drain current *1 Pulsed I 10 9.6 A DP Continuous I 0.8 0.8 A Source current s *1 (Body Diode) 10 9.6 A Pulsed I sp *2 1.25 W / TOTAL P Power dissipation D 1.0 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. www.rohm.com 2010.07 - Rev.A 1/8 2010 ROHM Co., Ltd. All rights reserved.TT8M3 Data Sheet Electrical characteristics (Ta = 25 C) <Tr1(Nch)> Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage I -- 10 AV =10V, V =0V GSS GS DS Drain-source breakdown voltage V 20 - - V I =1mA, V =0V (BR)DSS D GS Zero gate voltage drain current I -- 1 AV =20V, V =0V DSS DS GS Gate threshold voltage V 0.3 - 1.0 V V =10V, I =1mA GS (th) DS D -52 72 I =2.5A, V =4.5V D GS -65 90 I =2.5A, V =2.5V Static drain-source on-state D GS R * m DS (on) resistance - 85 120 I =1.2A, V =1.8V D GS - 100 140 I =0.5A, V =1.5V D GS * Forward transfer admittance l Y l 2.7 - - S V =10V, I =2.5A fs DS D Input capacitance C - 260 - pF V =10V iss DS Output capacitance C - 65 - pF V =0V oss GS Reverse transfer capacitance C - 35 - pF f=1MHz rss Turn-on delay time t -9 - nsI =1.2A, V 10V * d(on) D DD Rise time t * - 17 - ns V =4.5V r GS Turn-off delay time t * - 28 - ns R =8.3 d(off) L Fall time t * - 17 - ns R =10 f G * Total gate charge Q - 3.6 - nC I =2.5A, V 10V g D DD * Gate-source charge Q - 0.7 - nC V =4.5V,R =4 gs GS L Gate-drain charge Q * - 0.6 - nC R =10 gd G *Pulsed Body diode characteristics (Source-Drain) (Ta = 25 C) Parameter Symbol Min. Typ. Max. Unit Conditions * Forward Voltage V - - 1.2 V I =2.5A, V =0V SD s GS *Pulsed www.rohm.com 2010.07 - Rev.A 2/8 2010 ROHM Co., Ltd. All rights reserved.