Product Information

MMQ60R070PTH

MMQ60R070PTH electronic component of Magnachip

Datasheet
Trans MOSFET N-CH 600V 53A 3-Pin(3+Tab) TO-247 Tube
Manufacturer: Magnachip
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 3.0214 ea
Line Total: USD 9.06

0 - Global Stock
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 3
Multiples : 1

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MMQ60R070PTH
Magnachip

3 : USD 3.0214

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Mounting Style
Packaging
Channel Mode
Operating Temp Range
Pin Count
Number Of Elements
Drain-Source On-Volt
Operating Temperature Classification
Package Type
Rad Hardened
Type
Gate-Source Voltage Max
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Additional Infomation About Product

MMQ60R070P Datasheet MMQ60R070P 600V 0.07 N-channel MOSFET Description MMQ60R070P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Package & Internal Circuit D Parameter Value Unit V T 650 V DS j,max R 0.07 DS(on),max V 3 V TH,typ G I 53 A D S Q 132 nC g,typ D G S G G Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC DC Converters Ordering Information Order Code Marking Temp. Range Package Packing RoHS Status MMQ60R070PTH 60R070P -55 ~ 150 TO-247 Tube Halogen Free 1 Aug. 2014 Revision 1.0 MagnaChip Semiconductor Ltd. MMQ60R070P Datasheet Absolute Maximum Rating (T =25 unless otherwise specified) c Parameter Symbol Rating Unit Note Drain Source voltage V 600 V DSS Gate Source voltage V 30 V GSS 53 A T =25 C Continuous drain current I D 33.5 A T =100 C (1) Pulsed drain current I 159 A DM Power dissipation P 391 W D Single - pulse avalanche energy E 1135 mJ AS MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature T -55 ~150 stg Maximum operating junction T 150 j temperature 1) Pulse width t limited by T P j,max 2) I I , V V SD D DS peak (BR)DSS Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case max R 0.32 /W thjc Thermal resistance, junction-ambient max R 62.5 /W thja 2 Aug. 2014 Revision 1.0 MagnaChip Semiconductor Ltd.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Magnachip may also be referenced as

MagnaChip Semicon
MagnaChip Semiconductor

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