X-On Electronics has gained recognition as a prominent supplier of UMA4NTR Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. UMA4NTR Bipolar Transistors - Pre-Biased are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

UMA4NTR ROHM

UMA4NTR electronic component of ROHM
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See Product Specifications
Part No.UMA4NTR
Manufacturer: ROHM
Category: Bipolar Transistors - Pre-Biased
Description: ROHM Semiconductor Bipolar Transistors - Pre-Biased DUAL PNP 50V 100MA
Datasheet: UMA4NTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0889 ea
Line Total: USD 0.44 
Availability - 1978
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ: 5  Multiples: 5
Pack Size: 5

 UMA4NTR More Buying Options & Price Grid(s)

Availability Price Quantity
1978
Ship by Fri. 15 Nov to Wed. 20 Nov
MOQ : 5
Multiples : 5
5 : USD 0.0889
50 : USD 0.071
150 : USD 0.0619
500 : USD 0.0554
3000 : USD 0.0499
6000 : USD 0.0474

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Transistor Polarity
Typical Input Resistor
Mounting Style
Package / Case
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Continuous Collector Current
Peak DC Collector Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMA4NTR from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMA4NTR and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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Additional Infomation About Product

EMA4 / UMA4N / FMA4A Datasheet Emitter common(dual digital transistor) llOutline Parameter DTr1 and DTr2 SOT-553 SOT-353 V -50V CEO I -100mA C R 10k 1 EMA4 UMA4N (EMT5) (UMT5) SOT-25 llFeatures 1)Two DTA114T chips in a EMT or UMT or SMT package. FMA4A 2)Mounting cost and area can be cut in half. (SMT5) llInner circuit EMA4 / UMA4N FMA4A llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMA4 1616 T2R 180 8 8000 A4 (EMT5) SOT-353 UMA4N 2021 TR 180 8 3000 A4 (UMT5) SOT-25 FMA4A 2928 T148 180 8 3000 A4 (SMT5) www.rohm.com 1/6 20151019 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMA4 / UMA4N / FMA4A Datasheet llAbsolute maximum ratings (T = 25C) a <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I Collector current -100 mA C *1*2 P EMA4 150 D *1*2 P Power dissipation UMA4N 150 mW/Total D *1*3 FMA4A P 300 D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For DTr1 and DTr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E I V = -50V Collector cut-off current - - -500 nA CBO CB I V = -4V Emitter cut-off current - - -500 nA EBO EB Collector-emitter saturation voltage V I = -10mA, I = -1mA - - -300 mV C B CE(sat) h V = -5V, I = -1mA DC current gain 100 250 600 - FE CE C R Input resistance - 7 10 13 k 1 V = -10V, I = 5mA, CE E *4 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/6 2015 ROHM Co., Ltd. All rights reserved. 20151019 - Rev.002

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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