UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Outline UMT6 SMT6 Parameter Tr1 and Tr2 (4) (6) (5) (5) (6) (4) V 50V CEO (1) (3) I 100mA C (2) (2) (3) (1) R 10k 1 UMH8N IMH8A SOT-363 (SC-88) SOT-457 (SC-74) Features Inner circuit 1) Built-In Biasing Resistors. Collector Collector Base (6) (4) (5) 2) Two DTC114T chips in one package. 3) Built-in bias resistors enable the configuration of R 1 DTr2 an inverter circuit without connecting external DTr1 R 1 input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors (1) (2) (3) with complete isolation to allow negative biasing Emitter Emitter Base of the input. They also have the advantage of UMH8N completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for Emitter Base Emitter (6) (4) (5) operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. R 1 DTr1 DTr2 R 1 Application (1) Inverter circuit, Interface circuit, Driver circuit (3) (2) Collector Collector Base IMH8A Packaging specifications Package Basic Taping Reel size Tape width Part No. Package size ordering Marking code (mm) (mm) (mm) unit (pcs) UMH8N UMT6 2021 TN 180 8 3,000 H8 IMH8A SMT6 2928 T110 180 8 3,000 H8 www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 1/5Data Sheet UMH8N / IMH8A Absolute maximum ratings (Ta = 25C) <For DTr1 and DTr2 in common> Parameter Symbol Values Unit V 50 V Collector-base voltage CBO V 50 V Collector-emitter voltage CEO V Emitter-base voltage 5V EBO *1 Collector current I 100 mA C *3 Collector Power dissipation UMH8N mW 150 (Total) *2 P D *4 IMH8A mW 300 (Total) T Junction temperature 150 C j T Range of storage temperature 55 to 150 C stg Electrical characteristics(Ta = 25C) <For DTr1 and DTr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit BV I = 50 A Collector-base breakdown voltage 50 - - V CBO C Collector-emitter breakdown voltage BV I = 1mA 50 - - V CEO C Emitter-base breakdown voltage BV I = 50 A 5- - V EBO E I V = 50V Collector cut-off current - - 0.5 A CBO CB I V = 4V Emitter cut-off current - - 0.5 A EBO EB Collector-emitter saturation voltage V I / I = 10mA / 1mA - - 0.3 V CE(sat) C B DC current gain h V = 5V , I = 1mA 100 250 600 - FE CE C Input resistance R - 710 13 k 1 V = 10V, I = 5mA *1 CE E Transition frequency f - 250 - MHz T f = 100MHz *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2014 ROHM Co., Ltd. All rights reserved. 2014.10 - Rev.C 2/5