US6M11TR

1.5V Drive Nch+Pch MOSFET US6M11 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET z Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 z Applications z Inner circuit Switching (6) (5) (4) 1 z Packaging specifications 2 Package Taping 2 Type Code TR Basic ordering unit (pieces) 3000 1 (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate US6M11 (3) Tr2 (Pch) Drain (1) (2) (3) (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE (6) Tr1 (Nch) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Tr1 : Nchannel Tr2 : Pchannel Drain-source voltage V 20 12 V DSS Gate-source voltage VGSS 10 10 V I 1.5 1.3 A Continuous D Drain current 1 Pulsed IDP 6 5.2 A I 0.5 0.5 A Source current Continuous S 1 (Body diode) Pulsed ISP 6 5.2 A 1.0 W / TOTAL 2 Power dissipation PD 0.7 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit 125 C/W / TOTAL Channel to ambient Rth(ch-a) 179 C/W / ELEMENT Mounted on a ceramic board www.rohm.com 2009.07 - Rev.A 1/7 c 2009 ROHM Co., Ltd. All rights reserved. 0.2Max. US6M11 Data Sheet <N-ch> z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Gate-source leakage IGSS 10 AVGS= 10V, VDS=0V Drain-source breakdown voltage 20 VI = 1mA, V =0V V(BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 10V, ID= 1mA 130 180 m ID= 1.5A, VGS= 4.5V Static drain-source on-state 170 240 m ID= 1.5A, VGS= 2.5V R DS (on) resistance 220 310 m ID= 0.8A, VGS= 1.8V 300 600 m ID= 0.3A, VGS= 1.5V Forward transfer admittance Yfs 1.6 SVDS= 10V, ID= 1.5A Input capacitance Ciss 110 pF VDS= 10V Output capacitance Coss 18 pF VGS=0V Reverse transfer capacitance Crss 15 pF f=1MHz Turn-on delay time td (on) 5 ns VDD 10V ID= 1A Rise time tr 5 ns VGS= 4.5V Turn-off delay time td (off) 20 ns RL 10 Fall time tf 3 ns RG=10 Total gate charge Qg 1.8 nC VDD 10V, VGS= 4.5V Gate-source charge Qgs 0.3 nC ID= 1.5A Gate-drain charge Q 0.3 nC R 6.7, R = 10 gd L G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 1.5A, V =0V S GS Pulsed <P-ch> z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 12V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 190 260 m ID= 1.3A, VGS= 4.5V Static drain-source on-state 280 390 m I = 0.6A, V = 2.5V D GS RDS (on) resistance 400 600 m ID= 0.6A, VGS= 1.8V 530 1060 m ID= 0.2A, VGS= 1.5V Forward transfer admittance Y 1.4 SV = 6V, I = 1.3A fs DS D Input capacitance Ciss 290 pF VDS= 6V Output capacitance Coss 28 pF VGS= 0V Reverse transfer capacitance C 21 pF f=1MHz rss Turn-on delay time td (on) 8 ns VDD 6V ID= 0.6A Rise time tr 10 ns VGS= 4.5V Turn-off delay time t 30 ns d (off) RL 10 Fall time tf 9 ns RG= 10 Total gate charge Qg 2.4 nC VDD 6V, VGS= 4.5V Gate-source charge Q 0.6 nC I = 1.3A gs D Gate-drain charge Qgd0.4 nC RL 4.6, R G= 10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 1.3A, V =0V S GS Pulsed www.rohm.com 2009.07 - Rev.A 2/7 c 2009 ROHM Co., Ltd. All rights reserved.