US6M11TR ROHM

US6M11TR electronic component of ROHM
US6M11TR ROHM
US6M11TR MOSFETs
US6M11TR  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of US6M11TR MOSFETs across the USA, India, Europe, Australia, and various other global locations. US6M11TR MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. US6M11TR
Manufacturer: ROHM
Category: MOSFETs
Description: MOSFET TRANS MOSFET N/P-CH 20V/12V 6PIN
Datasheet: US6M11TR Datasheet (PDF)
Price (USD)
5: USD 0.4664 ea
Line Total: USD 2.33 
Availability : 160
  
Ship by Mon. 27 Oct to Fri. 31 Oct
QtyUnit Price
5$ 0.4664
50$ 0.3622
150$ 0.2143
500$ 0.1766
3000$ 0.1598
6000$ 0.1497

Availability 160
Ship by Mon. 27 Oct to Fri. 31 Oct
MOQ : 5
Multiples : 5
QtyUnit Price
5$ 0.4664
50$ 0.3622
150$ 0.2143
500$ 0.1766
3000$ 0.1598
6000$ 0.1497


Availability 477
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.9825
10$ 0.6112
100$ 0.3531
500$ 0.2607
1000$ 0.2387
3000$ 0.2123
6000$ 0.2079
9000$ 0.2002

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Ciss - Input Capacitance
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Series
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
LoadingGif
 
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We are delighted to provide the US6M11TR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6M11TR and other electronic components in the MOSFETs category and beyond.

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1.5V Drive Nch+Pch MOSFET US6M11 z Structure z Dimensions (Unit : mm) Silicon N-channel MOSFET / TUMT6 Silicon P-channel MOSFET z Features 1) Nch MOSFET and Pch MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low voltage drive (1.5V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : M11 z Applications z Inner circuit Switching (6) (5) (4) 1 z Packaging specifications 2 Package Taping 2 Type Code TR Basic ordering unit (pieces) 3000 1 (1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate US6M11 (3) Tr2 (Pch) Drain (1) (2) (3) (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate 1 ESD PROTECTION DIODE (6) Tr1 (Nch) Drain 2 BODY DIODE z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Tr1 : Nchannel Tr2 : Pchannel Drain-source voltage V 20 12 V DSS Gate-source voltage VGSS 10 10 V I 1.5 1.3 A Continuous D Drain current 1 Pulsed IDP 6 5.2 A I 0.5 0.5 A Source current Continuous S 1 (Body diode) Pulsed ISP 6 5.2 A 1.0 W / TOTAL 2 Power dissipation PD 0.7 W / ELEMENT Channel temperature Tch 150 C Range of storage temperature Tstg 55 to +150 C 1 Pw10s, Duty cycle1% 2 Mounted on a ceramic board. z Thermal resistance Parameter Symbol Limits Unit 125 C/W / TOTAL Channel to ambient Rth(ch-a) 179 C/W / ELEMENT Mounted on a ceramic board www.rohm.com 2009.07 - Rev.A 1/7 c 2009 ROHM Co., Ltd. All rights reserved. 0.2Max. US6M11 Data Sheet <N-ch> z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Conditions Unit Gate-source leakage IGSS 10 AVGS= 10V, VDS=0V Drain-source breakdown voltage 20 VI = 1mA, V =0V V(BR) DSS D GS Zero gate voltage drain current IDSS 1 AVDS= 20V, VGS=0V Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 10V, ID= 1mA 130 180 m ID= 1.5A, VGS= 4.5V Static drain-source on-state 170 240 m ID= 1.5A, VGS= 2.5V R DS (on) resistance 220 310 m ID= 0.8A, VGS= 1.8V 300 600 m ID= 0.3A, VGS= 1.5V Forward transfer admittance Yfs 1.6 SVDS= 10V, ID= 1.5A Input capacitance Ciss 110 pF VDS= 10V Output capacitance Coss 18 pF VGS=0V Reverse transfer capacitance Crss 15 pF f=1MHz Turn-on delay time td (on) 5 ns VDD 10V ID= 1A Rise time tr 5 ns VGS= 4.5V Turn-off delay time td (off) 20 ns RL 10 Fall time tf 3 ns RG=10 Total gate charge Qg 1.8 nC VDD 10V, VGS= 4.5V Gate-source charge Qgs 0.3 nC ID= 1.5A Gate-drain charge Q 0.3 nC R 6.7, R = 10 gd L G Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 1.5A, V =0V S GS Pulsed <P-ch> z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS 10 AVGS= 10V, VDS=0V Drain-source breakdown voltage V(BR) DSS 12 VID= 1mA, VGS=0V Zero gate voltage drain current I 1 AV = 12V, V =0V DSS DS GS Gate threshold voltage VGS (th) 0.3 1.0 V VDS= 6V, ID= 1mA 190 260 m ID= 1.3A, VGS= 4.5V Static drain-source on-state 280 390 m I = 0.6A, V = 2.5V D GS RDS (on) resistance 400 600 m ID= 0.6A, VGS= 1.8V 530 1060 m ID= 0.2A, VGS= 1.5V Forward transfer admittance Y 1.4 SV = 6V, I = 1.3A fs DS D Input capacitance Ciss 290 pF VDS= 6V Output capacitance Coss 28 pF VGS= 0V Reverse transfer capacitance C 21 pF f=1MHz rss Turn-on delay time td (on) 8 ns VDD 6V ID= 0.6A Rise time tr 10 ns VGS= 4.5V Turn-off delay time t 30 ns d (off) RL 10 Fall time tf 9 ns RG= 10 Total gate charge Qg 2.4 nC VDD 6V, VGS= 4.5V Gate-source charge Q 0.6 nC I = 1.3A gs D Gate-drain charge Qgd0.4 nC RL 4.6, R G= 10 Pulsed z Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VSD 1.2 V I = 1.3A, V =0V S GS Pulsed www.rohm.com 2009.07 - Rev.A 2/7 c 2009 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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