X-On Electronics has gained recognition as a prominent supplier of US6X7TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. US6X7TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

US6X7TR ROHM

US6X7TR electronic component of ROHM
US6X7TR ROHM
US6X7TR Bipolar Transistors - BJT
US6X7TR Semiconductors

Images are for reference only
See Product Specifications
Part No. US6X7TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN+NPN 12VCEO 1.5A SOT-363T
Datasheet: US6X7TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.74 ea
Line Total: USD 0.74 
Availability - 5479
Ship by Wed. 04 Jun to Fri. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 US6X7TR More Buying Options & Price Grid(s)

Availability Price Quantity
5479
Ship by Wed. 04 Jun to Fri. 06 Jun
MOQ : 1
Multiples : 1
1 : USD 0.74
10 : USD 0.5275
100 : USD 0.3381
500 : USD 0.2783
1000 : USD 0.2431
3000 : USD 0.2134

2878
Ship by Wed. 04 Jun to Fri. 06 Jun
MOQ : 1
Multiples : 1
1 : USD 0.784
10 : USD 0.6552
75 : USD 0.252
205 : USD 0.238
12000 : USD 0.2296

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the US6X7TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US6X7TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

US6X7 Datasheet Complex Midium Power Transistor llOutline Parameter Tr1 and Tr2 SOT-363T V 12V CEO I 1.5A C TUMT6 llFeatures llInner circuit 1)High current 2)Low saturation voltage V : max.200mV CE(sat) at I =500mA/I =25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363T US6X7 2021 TR 180 8 3000 X07 (TUMT6) www.rohm.com 1/6 20160408 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. US6X7 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 1.5 A C Collector current *1 I 3 A CP *2 P 0.4 W/Total D Power dissipation *3*4 P 1.0 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV Emitter-base breakdown voltage I = 10A 6 - - V EBO E Collector cut-off current I V = 15V - - 100 nA CBO CB Emitter cut-off current I V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 500mA, I = 25mA - 85 200 mV CE(sat) C B h DC current gain V = 2V, I = 200mA 270 - 680 - FE CE C V = 2V, I = -200mA, CE E f Transition frequency - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 12 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(25250.8mm) *4 0.7W per element must not be exceeded. www.rohm.com 2/6 20160408 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
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