Product Information

SW18N50

SW18N50 electronic component of Sam&wing

Datasheet
MOSFET N Trench 500V 18A (Tc) 4.5V @ 250uA 300 mΩ @ 9A,10V TO-220F RoHS
Manufacturer: Sam&wing
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0847 ea
Line Total: USD 1.08

2 - Global Stock
Ships to you between
Mon. 03 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2 - WHS 1


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

SW18N50
Sam&wing

1 : USD 1.0172
10 : USD 0.828
50 : USD 0.7353
100 : USD 0.6406
500 : USD 0.5842
1000 : USD 0.5561

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SW18N50 is a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) device manufactured by Sam&wing. It is capable of providing high performance and power switching with low on-resistance. It is designed to run at a drain-to-source voltage (Vdss) of 500V and it has a maximum drain-to-source current of 18A (Id). The threshold voltage (Vth) of the device is 4.5V, along with a total gate charge of 250uA (Qg) and an on-resistance of 300mO (Rdson) at 9A drain-to-source current. This device is housed in a TO-220F package and it is compliant with RoHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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