Product Information

SW7N80

SW7N80 electronic component of Sam&wing

Datasheet
MOSFET N Trench 800V 7A (Tc) 4.5V @ 250uA 1.8 Ω @ 3.5A,10V TO-220F RoHS

Manufacturer: Sam&wing
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8666 ea
Line Total: USD 0.87

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

SW7N80
Sam&wing

1 : USD 0.8666
10 : USD 0.7385
30 : USD 0.6731
100 : USD 0.6256
500 : USD 0.5803
1000 : USD 0.5552

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The Sam&wing SW7N80 is a MOSFET N Trench 800V 7A (Tc) 4.5V @ 250uA 1.8O @ 3.5A,10V TO-220F RoHS electronic part. The MOSFET N Trench 800V 7A (Tc) 4.5V @ 250uA 1.8O @ 3.5A,10V TO-220F RoHS is a power transistor, allowing for high voltage and current conduction in applications such as power supply, motor control, lighting, and amplifier solutions. Its features include a TO-220F plastic package, RoHS (Restriction of Hazardous Substances) compliance, and a drain-source breakdown voltage of 800V. This power transistor also has a continuous drain current of 7A with a maximum operating junction temperature of +220°C. Its gate threshold voltage is 4.5V @ 250uA, and its rDS(on) is 1.8O @ 3.5A,10V. This part is designed to be highly efficient and reliable in demanding operating conditions.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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