Product Information

CIG22H1R5MNE

CIG22H1R5MNE electronic component of Samsung

Datasheet
Inductor Power Chip Shielded Multi-Layer 1.5uH 20% 1MHz Ferrite 1.5A 104mOhm DCR 1008 T/R
Manufacturer: Samsung
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

88: USD 0.0974 ea
Line Total: USD 8.57

141735 - Global Stock
Ships to you between
Thu. 16 May to Wed. 22 May
MOQ: 88  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
140765 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 88
Multiples : 1

Stock Image

CIG22H1R5MNE
Samsung

88 : USD 0.0407
100 : USD 0.0403
250 : USD 0.0398
500 : USD 0.0394
1000 : USD 0.039
3000 : USD 0.0384
6000 : USD 0.0381
15000 : USD 0.0373

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Type
Shielding
Inductance
Tolerance
Maximum DC Current
Self Resonant Frequency
Core Material
Packaging
Brand
Operating Temp Range
Rad Hardened
Product Depth Mm
Technology
Product Diameter Mm
Failure Rate
Case Size
Military Standard
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Additional Infomation About Product

Ver. 201306 Multilayer Power Inductor CIG22H Series (2520/ EIA 1008) APPLICATION Mobile phones, DSC, DVC, PDA etc. for DC-DC Converter FEATURES RECOMMENDED LAND PATTERN High Current Type Low DC resistance Magnetically shielded structure Free of all RoHS-regulated substances Monolithic structure for high reliability DIMENSION Dimension mm TYPE L W T D 22 2.50.2 2.00.2 1.10.1 0.550.25 DESCRIPTION 2 1 Rated Current (A) Size Inductance DC Rated Current (A) Part no. inch/mm) uH) 1MHz Resistance( Typ. ( ( ) Max. Typ. CIG22H1R0MNE 1008/2520 1.0 20 % 0.08025 % 3.3 1.5 2.0 CIG22H1R2MNE 1008/2520 1.2 20 % 0.09420 % 2.8 1.5 1.9 CIG22H1R5MNE 1008/2520 1.5 20 % 0.10420 % 2.4 1.5 1.6 CIG22H2R2MNE 1008/2520 2.2 20 % 0.11620 % 1.8 1.2 1.6 CIG22H3R3MNE 1008/2520 3.3 20 % 0.13320 % 1.0 1.0 1.5 CIG22H4R7MNE 1008/2520 4.7 20 % 0.23320 % 0.95 0.8 1.0 1 Rated Current (A) : DC current value when Inductance drops to 30% of nominal Inductance value (ONLY REFERENCE) 2 Rated Current (A) : DC current value when the self-generation of heat rises to 40 (Reference ambient temperature:25 ) Operating temperature range: 40 to +125C ( Including self-temperature rise) Test equipment: Agilent :E4991A+16092A CHARACTERISTIC DATA Frequency characteristics Typ.) DC Bias characteristics Typ.) 1) ( 2) (Ver. 201306 PRODUCT IDENTIFICATION CI G 22 H 1R0 M N E (1) (2) (3) (4) (5) (6) (7) (8) Chip Inductor Power Inductor (1) (2) Dimension Product Series H:High Current Type) (3) (4) ( Inductance R0:1.0uH) Tolerance M: (5) (1 (6) ( 20%) Thickness option(N:Standard, A:Thinner than standard, B:Thicker than standard) (7) Packaging(C:paper tape, E:embossed tape) (8) RECOMMENDED SOLDERING CONDITION FLOW SOLDERING REFLOW SOLDERING PACKAGING Packaging Style Quantity(pcs/reel) Embossed Taping 2,500 Any data in this sheet are subject to change, modify or discontinue without notice. The data sheets include the typical data for design reference only. If there is any question regarding the data sheets, please contact our sales personnel or application engineers.

HS Compliance

Tariff Desc

8504.50 COILS, toroidal, having ALL of the following: (a) winding wire dia NOT exceeding 0.25 mm; (b) internal window dia NOT exceeding 40 mm; (c) external dia NOT exceeding 55 mm Op. 17.06.1985 Dec. 13.01.1986 - TC 8532473

8504.90 CORES AND SHAPES, ferrite, iron powder or molybdenum permalloy powder Op. 13.03.1984 Dec. 13.03.1984 - TC 8342777

Samsung may also be referenced as

SAMSUNG
Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
SMP

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