K4T51163QN-BCE7000 Samsung

K4T51163QN-BCE7000 electronic component of Samsung

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of K4T51163QN-BCE7000 across the USA, India, Europe, Australia, and various other global locations. K4T51163QN-BCE7000 are a product manufactured by Samsung. We provide cost-effective solutions for K4T51163QN-BCE7000, ensuring timely deliveries around the world.

Part No.	K4T51163QN-BCE7000
Manufacturer:	Samsung
Category:	Unclassified
Description:	n/a K4T51163QN-BCE7000 is a 4GB DDR4 RAM chip from Samsung.
Datasheet:

Price (USD)

N/A

K4T51163QN-BCE7000 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

MOQ : 6
Multiples : 1

Qty	Unit Price
6	$ 2.7344
60	$ 2.3205
600	$ 2.0085
3000	$ 1.8673
6000	$ 1.8648

N/A

Specifications

Manufacturer Samsung Samsung
Product Category Unclassified Unclassified

We are delighted to provide the K4T51163QN-BCE7000 from our Samsung manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the K4T51163QN-BCE7000 and other electronic components in the Samsung manufacturer and beyond.

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Additional Infomation About Product

's 512GB M.2 NVMe The K4T51163QN-BCE7000 part of Samsung's 512GB M.2 NVMe is a Samsung NAND Flash memory device. It is a PCIe Gen3 x4-based M.2 solid-state drive (SSD) with a single-sided M.2 2280 form factor. The K4T51163QN-BCE7000 is a 3-bit MLC (Multi-level Cell) NAND Flash memory, which offers reliable performance and excellent power efficiency. It has a high-capacity of 512GB, and is excellent for enterprise and data center applications such as data management, analytics, and cloud computing. Additionally, the device comes with a magnetic-resistant ferrite core board, which helps protect against any potential data corruption.

SAMSUNG may also be referenced as

Samsung ARTIK
SAMSUNG ELECTRO-MECH
Samsung Electro-Mechanics
Samsung Electro-Mechanics America, Inc.
SAMSUNG GVI
SAMSUNG LED
SAMSUNG PASSIVES
SAMSUNG SDI
SAMSUNG SEMI
Samsung Semiconductor
Samsung Semiconductor, Inc.
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