DF60NB160 Sanrex

DF60NB160 electronic component of Sanrex
DF60NB160 Sanrex
DF60NB160 Discrete Semiconductor Modules
DF60NB160  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of DF60NB160 Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. DF60NB160 Discrete Semiconductor Modules are a product manufactured by Sanrex. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. DF60NB160
Manufacturer: Sanrex
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules Discrete Semiconductor Modules 1600V 60A Bridge Rectifiers
Datasheet: DF60NB160 Datasheet (PDF)
Price (USD)
1: USD 43.692 ea
Line Total: USD 43.69 
Availability : 9
  
Ship by Fri. 05 Sep to Tue. 09 Sep
QtyUnit Price
1$ 43.692
12$ 33.407
108$ 33.396

Availability 9
Ship by Fri. 05 Sep to Tue. 09 Sep
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 43.692
12$ 33.407
108$ 33.396

   
Manufacturer
Product Category
Product
Type
Vf - Forward Voltage
Vr - Reverse Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DF60NB160 from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF60NB160 and other electronic components in the Discrete Semiconductor Modules category and beyond.

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DIP TYPE DIODE MODDULE DF60NB160 DIP-Type 3-Phase Diode Bridge DIP Advantages Power Cycle capability (Long Term Reliability) is imploved by more than 3 times using a Transfer Mold Package (at Tj=100) compare to our existing model. Volume ratio of 1/10, Footprint size 1/2 1/10 1/2 Compare to our existing module of same DF60LA/LB 28.0 capacity. CIRCUIT DIAGRAM 45.0 28.0 Reduce thermal resistance with Unique CIRCUIT DIAGRAM 45.0 internal structure and copper heat plate. Dual terminals for high capability and reliable solder contact. Applications 28.0 CIRCUIT DIAGRAM Packaged Air Conditioner/Motor Drives/ 45.0 Servo Controller/Battery Charger/Power Supply Unit mm Maximum Ratings Tj=25 unless otherwise specied / Tj25 Ratings Symbol Item Unit DF60NB160 Repetitive Peak Reverse Voltage VRRM 1600 V Non-Repetitive Peak Reverse Voltage VRSM 1700 V Symbol Item Conditions Ratings Unit Output CurrentDC ID Tc110 60 A Surge Forward Current 50/60Hz sine wave, Non-repetitive 1cycle peak value IFSM 730/800 A 50/60Hz 1 2 I t Value for one cycle of surge current 2 2 I t 2600 A s 1 Operating Junction Temperature Tj 40150 Storage Temperature Tstg 40125 Terminals to case, AC 1minute Isolation Breakdown VoltageR.M.S VISO 2500 V AC 1 Mounting Torque Recommended Torque1.01.4Nm M4 1.5 Nm 1.01.4 Mass Typical Value 24 g Electrical Characteristics Tj=25 unless otherwise specied / Tj25 Ratings Symbol Item Conditions Unit Min. Typ. Max. Repetitive Peak Reverse Current IRRM Tj150 V R = VRRM 8.0 mA Forward Voltage Drop Inst. measurement VFM Tj25 1.08 1.30 V IFM60A Threshold Voltage VTTO Tj150 0.91 V Slope Resistance rt Tj150 4.9 m Thermal Resistance Junction to case per one module Rthj-c 0.25 /W Case to Heat sink -3 Interface Thermal Resistance Termal conductivitySilicon grease 910 W/cm Rthc-f 0.2 /W -3 9 10 W/cm 5.0 8.6 22.0 16.0 32.0 5.0 5.0 8.6 8.6 22.0 22.0 16.0 16.0 32.0 32.0 DF60NB160 Maximum Forward Characteristics Output Current vs. Power Dissipation 1000 200 Three Phase 150 100 100 Pav IF 10 W A 50 Tj25Max Tj25Typ Tj150Max Tj150Typ 0 0 0.5 1.0 1.5 2.0 10 20 30 40 50 60 70 Forward Voltage Drop VFV Output CurrentA VFV IDA Output Current vs. Allowable Case Temperature Surge Forward Current RatingNon-Repetitive 900 150 Per One Chip Three Phase 140 800 130 Tj25 start 120 700 110 600 100 90 500 80 60Hz 70 400 60 50Hz 300 50 40 200 30 A 20 100 10 0 0 10 100 10 20 30 40 50 60 70 80 1 Timescycles Output CurrentA A cycles Transient Thermal Impedance 1 0.1 Maximum j-c Junction to Case Per One Module 0.01 1.0E03 1.0E02 1.0E01 1.0E+00 Times s Forward CurrentA Allowable Case Temperature Transient Thermal Impedance j-c/W Surge Forward CurrentA Total Power DissipationW

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