Product Information

FCA100AC120

FCA100AC120 electronic component of Sanrex

Datasheet
Discrete Semiconductor Modules 2in1 1200V SiC FET 100A 6.8mOhm 20Vgs

Manufacturer: Sanrex
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 809.4434 ea
Line Total: USD 809.44

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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FCA100AC120
Sanrex

1 : USD 752.7783
5 : USD 726.8533

     
Manufacturer
Product Category
Product
Type
Vgs - Gate-Source Voltage
Mounting Style
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Technology
Hts Code
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SiC MOSFET Module FCA100AC120 FCA100AC120 2in1 SiC MOSFET module Isolated module Integrated FWD function Features Small size package High reliability Safe gate driving Short circuit tolerance Low power loss Low temperature dependency of RDS(on) Unnecessity of additional FWD Applications Industrial inverters / DC-DC converters / EV chargers / Resonant power supply Unitmm Maximum Ratings (Tj=25 unless otherwise specified) Item Symbol Unit Ratings Conditions Drain-Source Voltage V V 1200 DSS Gate-Source Voltage(+) V 22 V GSS Gate-Source Voltage(-) V -7 Continuous Drain Current I A 100 V =20V, Tc=90 D GS Continuous Source Current I A 100 V =-5V, Tc=90 S GS Total Power Dissipation P W 625 T =25 tot C Operating Junction Temperature T -40 to +150 j Storage Temperature T -40 to +125 stg Isolation Voltage (RMS) V V 2500 AC 60Hz minute iso Mounting M5 2.7 Recommended Value 1.5 to 2.5 Mounting torque Terminal M5 2.7 Recommended Value 1.5 to 2.5 Mass 130 Typical value Electrical Characteristics (Tj=25 unless otherwise specified) Ratings Item Symbol Unit Conditions Min. Typ. Max. Drain-Source Breakdown Voltage V V 1200 V =0V, I =200A (BR)DSS GS D 0.68 1.40 V =20V, I =100A GS D Static Drain-Source On-State Voltage V V DS(on) 0.74 1.50 V =20V, I =100A, T =150 GS D j 6.8 14.0 V =20V, I =100A GS D On-State Resistance R m DS(on) 7.4 15.0 V =20V, I =100A,T=150 GS D j Drain Cutoff Current I A 200 V =1200V, V =0V DSS DS GS Gate-Source Threshold Voltage V V 3 4 5 V =10V, I =3mA GS(th) DS D Gate-Source Leakage Current I nA 200 V =20V, V =0V GSS GS DS t ns 58 d(on) t ns 33 I =100A, V =600V, V =+20V/-5V, r D DS GS Switching Characteristics R =3.3, L=126H t ns 121 G d(off) t ns 49 f Input Capacitance C nF 17.2 iss Output Capacitance C nF 5.0 V =20V, V =0V, f=100kHz oss DS GS Reverse Transfer Capacitance C nF 0.6 rss 2.60 2.90 V =-5V, I =100A GS S Source-Drain Voltage V V SD 2.62 2.95 V =-5V, I =100A, T =150 GS S j Diode Total Capacitive Charge Q nC 2300 I =100A, V =600V, di /dt=2400A/s, V =-5V c SD DS SD GSFCA100AC120 hermal Characteristics=25 unless otherwise specified Ratings Item Symbol Unit Conditions Min. Typ. Max. Thermal Resistance R /W 0.2 Junction to case (Per Leg) th(j-c) Case to Heat sink (Per Module) Thermal conductivity (Silicone grease) Interface Thermal Resistance R /W 0.06 th(c-f) -3 = 910 W/cm

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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