Product Information

PWB80A30

PWB80A30 electronic component of Sanrex

Datasheet
Discrete Semiconductor Modules Discrete Semiconductor Modules 300V 80A

Manufacturer: Sanrex
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 66.8375 ea
Line Total: USD 66.84

9 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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PWB80A30
Sanrex

1 : USD 66.7885
10 : USD 60.7136
20 : USD 58.6847
50 : USD 56.6558
100 : USD 54.6387
200 : USD 52.6098
500 : USD 50.5927

     
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THYRISTOR MODULE NON-ISOLATED TYPE PWB80A PWB80A is a Thyristor module suitable for low voltage, 3 phase recifier applications. T(AV) I 80A (each device) High Surge Current 2500 A (60Hz) Easy Construction Non-isolated. Mounting base as common Anode terminal Applications Welding power Supply Various DC power Supply Unit A Maximum Ratings Ratings Symbol Item Unit PWB80A30 PWB80A40 RRM V Repetitive Peak Reverse Voltage 300 400 V RSM V Non-Repetitive Peak Reverse Voltage 360 480 V DRM V Repetitive Peak Off-State Voltage 300 400 V Symbol Item Conditions Ratings Unit T AV I Average On-State Current Single phase, half wave, 180 conduction, Tc 116 80 A IT RMS R.M.S. On-State Current Single phase, half wave, 180 conduction, Tc 116 125 A 1 ITSM Surge On-State Current cycle, 50Hz/60Hz, peak value, non-repetitive 2280 2500 A / 2 2 2 2 I t I t 26000 A S PGM Peak Gate Power Dissipation 10 W G AV P Average Gate Power Dissipation 1 W FGM I Peak Gate Current 3 A VFGM Peak Gate Voltage(Forward) 10 V VRGM Peak Gate Voltage(Reverse) 5 V 1 Critical Rate of Rise of On-State Current G D DRM G 50 di dt I 200mA Tj 25 V V dI /dt 1A/ s A/ s 2 Tj Operating Junction Temperature 30 to 150 Tstg Storage Temperature 30 to 125 Mounting M6 Recommended Value 2.5-3.9 25-40 4.7 48 Mounting N torque f B Terminal M5 Recommended Value 1.5-2.5 15-25 2.7 28 Mass 170 g Electrical Characteristics Symbol Item Conditions Ratings Unit DRM I Repetitive Peak Off-State Current, max. at VDRM, single phase, half wave, Tj 150 12 mA RRM I Repetitive Peak Reverse Current, max. at VDRM, single phase, half wave, Tj 150 12 mA VTM Peak On-State Voltage, max On-State Current 240A, Tj 25 Inst. measurement 1.20 V IGT VGT Gate Trigger Current/Voltage, max. Tj 25 IT 1A VD 6V 150/2 mA/V 1 VGD Non-Trigger Gate, Voltage. min. D DRM 0.25 V Tj 150 V V 2 1 tgt Turn On Time, max. T G D DRM G 10 I 80A I 200mA Tj 25 V V dI/dt 1A/ s s 2 2 dv dt Critical Rate of Rise of Off-State Voltage, min. Tj 150 , VD VDRM, Exponential wave. 50 V/ s 3 IH Holding Current, typ. Tj 25 100 mA 1 Rth j-c Thermal Impedance, max. Junction to case Module 0.35 W 3 / 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi sanrex.com PWB80A

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free

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