THYRISTOR MODULE SCE200CA200 UL E76102M SCE200CA Featur es and Advantages New and unique gate design for higher di/ d i/dt dt (Integrated Thyristor) 2.5 di/dt 2000V Applicable wide range of source voltage by adopting newly developed chip permis- sible up to 2000V high reverse voltage. Newly designed and less-layered internal structure for improved heat dissipation (low thermal resistance). In addition to reduced layer design, soldering on both sides of chips increased the long-term reliability (two times longer than our existing products) UL recognized under UL File E 76102 UL UL File E76102 RoHS EU RoHS compliant A pplications Unit mm Motor drives Servo controller Power controller Power supplies Maximum Ratings Tj25 unless otherwise speciedT j25 Ratings Symbol Item Unit SCE200CA200 *Repetitive Peak Reverse Voltage VRRM 2000 V *Non-Repetitive Peak Reverse Voltage VRSM 2100 V Repetitive Peak Off-state Voltage VDRM 2000 V Symbol Item Conditions Ratings Unit ITA V *Average On-stateF orwar d Current Single phase, half wave, 180 conduction, Tc 76 200 A IFA V 180 ITR MS *R.M.S. On-stateF orwar d Current Single phase, half wave, 180 conduction, Tc 76 314 A IFRMS 1 80 ITSM *Surge On-stateF orwar d Current cycle, 50/60Hz, Peak value, non-repetitive 5000/5500 A 50/60Hz IFSM 2 *I t Value for one cycle surge current 2 2 I t 125000 A s Peak Gate Power Dissipation PGM 10 W Average Gate Power Dissipation PGA V 3 W Peak Gate Current IFGM 3 A Peak Gate VoltageF orwar d VFGM 10 V Peak Gate VoltageR everse VRGM 5 V Critical Rate of Rise of On-state Current di/dt IG100mA, dI G/dt0.1A/ s 500 A/s A.C. 1minute *Isolation Breakdown Voltage VISO 2500 V A .C. *Operating Junction Temperature Tj 4 01 30 *Storage Temperature Tstg 40125 Recommended value MounM t 6 2.53 .9Nm 4.7 Mounting Torque N m Recommended value TerminaMl 6 2.53.9Nm 4.7 Mass Typical value 210 gSCE200CA200 Electrical Characteristics Tj2 5 unless otherwise speciedT j25 Ratings Symbol Item Conditions Unit min. typ. max. Repetitive Peak Off-state Current IDRM Tj130, V DV DRM 50 mA *Repetitive Peak Reverse Current IRRM Tj130, V RV RRM 50 mA Tj2 5, I T600A 1.70 VTM *On-stateF orwar d Voltage V VFM Tj130, I T6 00A 1.85 Tj2 5 1.10 *Threshold Voltage VTT O V Tj130 1.00 Tj25 1.08 *Dynamic Resistance rt m Tj1 30 1.42 Gate Trigger Current IGT VD6 V , IT1A 100 mA Gate Trigger Voltage VGT VD6V , IT1 A 3 V Gate Non-Trigger Voltage VGD Tj1 30, V DV DRM 0.25 V Turn-on Time tgt IT200A, I G100mA, V DV DRM, dIG/dt0.1A/s 10 s Critical Rate of Rise of Off-state Voltage exp. waveform dv/dt Tj130, V DV DRM, 1000 V/s Holding Current IH 180 mA Latching Current IL 250 mA cont., Junction to case, per one element *Thermal Resistance Rthj-c 0.155 / W cont., sin.180 , Junction to case, per one element 0.16 , sin.180 , *Effective Thermal Resistance Rthj -c /W rec.120 , Junction to case, per one element 0.17 , rec.120 , Case to Heat sink, per one element *Interface Thermal Resistance , Rthc -s 0.10 /W 3 Thermal conductivitSy ilicon gr ease 7 1 0 W/ 3 7 10 W / *mark: Thyristor and Diode part. No mark: Thyristor part.