THYRISTOR MODULE SCASCE200DA UL E76102M SCASCE200DA Features and Advantages New and unique gate design for higher di/dv (Integrated di/dt Thyristor. 2.5 times higher than existing products) 2.5 Newly designed and less-layered internal structure for improved heat dissipation (low thermal resistance) In addition to reduced layer design, soldering on both 2 sides of chips increased the long-term reliability (2 times longer than existing products) ULUL File E76102 UL recognized under UL File E76102 EU RoHS compliant R oHS Applications Motor drives Servo controller Power controller UPS UPS Soft starter Unit mm Power supplies Circuit Diagram SCA SCE Maximum Ratings Tj25 unless otherwise speciedTj25 Ratings Symbol Item Unit SCA200DA80 SCA200DA160 SCE200DA80 SCE200DA160 *Repetitive Peak Reverse Voltage VRRM 800 1600 V *Non-Repetitive Peak Reverse Voltage VRSM 960 1700 V Repetitive Peak Off-state Voltage VDRM 800 1600 V Symbol Item Conditions Ratings Unit ITAV *Average On-state Forward Current Single phase, half wave, 180 conduction, Tc82 200 A IFAV 180 ITRMS *R.M.S. On-state Forward Current Single phase, half wave, 180 conduction, Tc82 314 A IFRMS 180 ITSM *Surge On-state Forward Current cycle, 50/60Hz, Peak value, non-repetitive 6000/6500 A 50/60Hz IFSM 2 *I t Value for one cycle surge current 2 2 I t 180000 A s Peak Gate Power Dissipation PGM 10 W Average Gate Power Dissipation PGAV 3 W Peak Gate Current IFGM 3 A Peak Gate Voltage Forward VFGM 10 V Peak Gate Voltage Reverse VRGM 5 V Critical Rate of Rise of On-state Current di/dt IG100mA, VDVDRM, dIG/dt0.1A/s 500 A/s *Isolation Breakdown Voltage A.C. 1minute VISO 2500 V A.C. *Operating Junction Temperature Tj 40125 *Storage Temperature Tstg 40125 Recommended value Mount M6 2.53.9Nm 4.7 Mounting Torque Nm Recommended value Terminal M6 2.53.9Nm 4.7 Mass Typical value 210 g SCA160AA-S75-1303( ) SCASCE200DA Electrical Characteristics Tj25 unless otherwise speciedTj25 Ratings Symbol Item Conditions Unit min. typ. max. Repetitive Peak Off-state Current IDRM Tj125, VDVDRM 100 mA *Repetitive Peak Reverse Current IRRM Tj125, VRVRRM 100 mA IT500A 1.34 VTM *On-state Forward Voltage V VFM IT600A 1.4 Tj25 1.06 *Threshold Voltage VTTO V Tj125 0.87 Tj25 1.77 *Dynamic Resistance rt m Tj125 1.15 Gate Trigger Current IGT VD6V, IT1A 100 mA Gate Trigger Voltage VGT VD6V, IT1A 3 V Gate Non-Trigger Voltage VGD Tj125, VDVDRM 0.25 V Turn-on Time tgt IT200A, IG100mA, VDVDRM, dIG/dt0.1A/s 10 s Critical Rate of Rise of Off-state Voltage dv/dt Tj125, VDVDRM, exp. waveform 1000 V/s Holding Current IH 140 mA Latching Current IL 230 mA cont., Junction to case, per one element *Thermal Resistance Rthj-c 0.155 /W cont., sin.180, Junction to case, per one element 0.16 , sin.180, *Effective Thermal Resistance Rthj-c /W rec.120, Junction to case, per one element 0.17 , rec.120, Case to Heat sink, per one element *Interface Thermal Resistance , Rthc-s 0.1 /W 3 Thermal conductivity Silicon grease710 W/ 3 710 W/ *mark: Thyristor and Diode part. No mark: Thyristor part.