THYRISTOR MODULE SCASCE240DA UL E76102M SCASCE 240DA Featur es and Advantages 93.51.0 800.3 Unique heat dissipation technology offers 240A high current 160A/200A 3-M6 screwing depth:12mm capacity yet the same size package as 160A & 200A models. 240A 26.50.2 2 6 7 New and unique gate design for higher di/dt and di/dt Lightning surge immunity. (Thyristor chip. Comparison with our existing model.) 2.5 di/dt 4 5 1 3 Newly design and less-layer internal structure for 25.00.3 improved heat dissipation. (Low thermal resistance) 230.3 230.3 17.0 Compact module package contributes to equipment 63.5 size reduction and space savings Applications Motor Drives Servo Controller Power Controller UPS Soft Starter Unit mm Power Supplies Circuit Diagram 1 2 3 1 2 3 6G2) 7K2 + 4G15K1 + 4G15K1 SCA SCE Maximum Ratings Tj25 unless otherwise speciedTj25 Ratings Symbol Item Unit SCA240DA160 SCE240DA160 *Repetitive Peak Reverse Voltage VRRM 1600 V *Non-Repetitive Peak Reverse Voltage VRSM 1700 V Repetitive Peak Off-state Voltage VDRM 1600 V Symbol Item Conditions Ratings Unit ITAV *Average On-state Forward Current Single phase, half wave, 180 conduction, Tc 86 240 A IFAV 180 ITRMS *R.M.S. On-state Forwar d Current Single phase, half wave, 180 conduction, Tc 86 376 A IFRMS 180 ITSM *Surge On-state Forwar d Current cycle, 50/60Hz, Peak value, non-repetitive 6000/6500 A 50/60Hz IFSM 2 *I t Value for one cycle surge current 2 2 I t 180000 A s Peak Gate Power Dissipation PGM 10 W Average Gate Power Dissipation PGAV 3 W Peak Gate Current IFGM 3 A Peak Gate Voltage Forward VFGM 10 V Peak Gate Voltage Reverse VRGM 5 V Critical Rate of Rise of On-state Current di/dt IG100mA, V DV DRM, dIG/dt0.1A/ s 500 A/s *Isolation Breakdown Voltage A.C. 1minute VISO 3000 V A.C. *Operating Junction Temperature Tj 40 125 *Storage Temperature Tstg 40 125 Recommended value MountM6 2.53.9N m 4.7 Mounting Torque N m Recommended value TerminalM6 2.53.9N m 4.7 Mass Typical value 210 g 33.01.0 30.0 13.2 8.50.3 5.00.3 27.0 29.0 20.80.12.80.1 ( ) SCASCE240DA Electrical Characteristics Tj25 unless otherwise speciedTj25 Ratings Symbol Item Conditions Unit min. typ. max. Repetitive Peak Off-state Current IDRM Tj125 , V DV DRM 100 mA *Repetitive Peak Reverse Current IRRM Tj125, V RV RRM 100 mA VTM *On-state Forward Voltage IT750A 1.5 V VFM Tj25 1.06 *Threshold Voltage VTTO V Tj125 0.87 Tj25 1.77 *Dynamic Resistance rt m Tj125 1.15 Gate Trigger Current IGT VD6V , I T1A 100 mA Gate Trigger Voltage VGT VD6V, I T1A 3 V Gate Non-Trigger Voltage VGD Tj125 , V DV DRM 0.25 V Turn-on Time tgt IT240A, I G100mA, V DV DRM, dIG/dt0.1A/s 10 s Critical Rate of Rise of Off-state Voltage dv/dt Tj125, V DV DRM 1000 V/s Holding Current IH 140 mA Latching Current IL 230 mA cont., Junction to case, per one element *Thermal Resistance Rthj-c 0.105 /W cont., Case to Heat sink, per one element *Interface Thermal Resistance , Rthc-s 0.1 /W Thermal conductivitySilicon grease 0.9W/m K 0.9 W/mK *mark: Thyristor and Diode part. No mark: Thyristor part. Maximum On Characteristics Gate Characteristics 100 2000 25 TYP25 TYP 1800 1600 Peak Forward Gate Voltage Peak Gate Power 125 MAX125 MAX 10V 10W 1400 10 1200 1000 800 IT Average Gate Power V1 3W A600 125 TYP125 TYP 125 2525 400 3030 200 Minimum Gate Non-Trigger Voltage 25 MAX25 MAX 0 0.1 0.5 1.0 1.5 2.0 2.5 100 1000 10000 10 On-state Voltage Drop Gate Current VTMV mA Gate Voltage Peak Gate Current A On-state Peak Current