2N4233A Semiconductors

2N4233A electronic component of Semiconductors Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N4233A Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N4233A Bipolar Transistors - BJT are a product manufactured by Semiconductors. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N4233A
Manufacturer: Semiconductors
Category: Bipolar Transistors - BJT
Description: Microsemi
Datasheet:
Price (USD)
1: USD 72.4631 ea
Line Total: USD 72.46 
Availability : 1
  
Ship by Fri. 14 Nov to Thu. 20 Nov
QtyUnit Price
1$ 72.4631

Availability 1
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 72.4631

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Brand
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We are delighted to provide the 2N4233A from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4233A and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N4233A is an NPN, silicon planar, double diffused transistor from Central Semiconductor. It is designed for medium power amplifier, switching and applications. It has a maximum collector current of 0.35A and a maximum collector-base voltage of 28V. Its DC current gain (hFE) is 40-125 at 10mA and its collector-emitter saturation voltage is 0.3V or less. Its power dissipation is 500 mW. It has a turn-on time of 40µs and a turn-off time of 40µs. It is housed in hermetically sealed TO220 package with through-hole mounting.

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