2N4860 Semiconductors

2N4860 electronic component of Semiconductors
2N4860 Semiconductors
2N4860 JFET
2N4860  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of 2N4860 JFET across the USA, India, Europe, Australia, and various other global locations. 2N4860 JFET are a product manufactured by Semiconductors. We provide cost-effective solutions for JFET, ensuring timely deliveries around the world.

Part No. 2N4860
Manufacturer: Semiconductors
Category: JFET
Description: JFET Leaded JFET
Datasheet: 2N4860 Datasheet (PDF)
Price (USD)
2: USD 44.9145 ea
Line Total: USD 89.83 
Availability : 3
  
Ship by Wed. 06 Aug to Tue. 12 Aug
QtyUnit Price
2$ 44.9145
5$ 22.775

Availability 3
Ship by Wed. 06 Aug to Tue. 12 Aug
MOQ : 2
Multiples : 1
QtyUnit Price
2$ 44.9145
5$ 22.775

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
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We are delighted to provide the 2N4860 from our JFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N4860 and other electronic components in the JFET category and beyond.

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1. The 2N4860 is an NPN silicon transistor designed for general purpose audio amplifier and switching applications in a TO-92-style package. 2. The device features a maximum collector current of 500mA, a minimum DC current gain of 10 and a maximum voltage of 40V. It offers excellent hFE decay and noise performance, with a high frequency transition frequency at 1 MHz. It also features a low collector-emitter saturation voltage to minimize switching time and maximize performance.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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