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SKIIP38AC12T4V1:SK

SKIIP38AC12T4V1:SK electronic component of Semikron

Datasheet
SKIIP38AC12T4V1SK semikron igbt modules transistors discrete semiconductors

Manufacturer: Semikron
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Price (USD)

2: USD 72.3492 ea
Line Total: USD 144.7

0 - Global Stock
MOQ: 2  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 2
Multiples : 1
2 : USD 72.3492

     
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SKiiP 38AC12T4V1 Absolute Maximum Ratings Symbol Conditions Values Unit Inverter - IGBT V T =25C 1200 V CES j I T =25C 115 A C s T = 175 C j T =70C 93 A s I 100 A Cnom I I = 3 x I 300 A CRM CRM Cnom V -20 ... 20 V GES V = 800 V CC MiniSKiiP 3 t V 15 V T =150 C 10 s psc GE j V 1200 V CES T -40 ... 175 C j Inverse - Diode I T =25C 100 A F s T = 175 C j SKiiP 38AC12T4V1 T =70C 79 A s I 100 A Fnom I I = 3 x I 300 A FRM FRM Fnom Features I 10 ms, sin 180, T =150 C 550 A FSM j Trench 4 IGBTs T -40 ... 175 C j Robust and soft freewheeling diodes in Module CAL technology Highly reliable spring contacts for I T = 80 C, 20A per spring 160 A terminal t(RMS) electrical connections T -40 ... 125 C stg UL recognised file no. E63532 V AC sinus 50Hz, t = 1 min 2500 V isol Typical Applications* Characteristics Inverter up to 41 kVA Symbol Conditions min. typ. max. Unit Typical motor power 22 kW Inverter - IGBT I =100A V C T =25C 1.80 2.05 V j CE(sat) Remarks V =15V GE T =150 C 2.20 2.40 V j V , V = chip level value CEsat F chiplevel Case temp. limited to T = 125C max. C V T =25C 0.8 0.9 V CE0 j (for baseplateless modules T = T ) C S T =150 C 0.7 0.8 V j product rel. results valid for T 150 j r T =25C 10 12 m CE j (recomm. T = -40 ... +150C) op V =15V GE For short circuit: Soft R T =150 C 15 16 m Goff j recommended V V =V , I =4mA 55.8 6.5 V GE(th) GE CE C I T =25C 0.1 0.3 mA CES V =0V j GE V = 1200 V CE mA C f=1MHz 6.15 nF ies V =25V CE C f=1MHz 0.41 nF oes V =0V GE C f=1MHz 0.34 nF res Q - 8 V...+ 15 V 565 nC G R T =25C 7.50 Gint j t T =150 C 160 ns d(on) V = 600 V j CC I =100A C t T =150 C 45 ns r j R =1 G on E T =150 C 13.7 mJ on j R =1 G off t T =150 C 395 ns d(off) j di/dt = 2080 A/s on t T =150 C 73 ns f di/dt =1240A/s j off V = +15/-15 V E GE T =150 C 9.7 mJ off j R per IGBT 0.48 K/W th(j-s) AC by SEMIKRON Rev. 3 05.12.2011 1SKiiP 38AC12T4V1 Characteristics Symbol Conditions min. typ. max. Unit Inverse - Diode I = 100 A V = V F T =25C 2.2 2.5 V F EC j V =0V GE T =150 C 2.1 2.5 V j chiplevel V T =25C 1.3 1.5 V j F0 T =150 C 0.9 1.1 V j r T =25C 9.0 10 m j F T =150 C 13 14 m j MiniSKiiP 3 I = 100 A I F T =150 C 112 A j RRM di/dt =2680A/s off Q T =150 C 16 C j rr V =-15V GE E T =150 C 6.5 mJ rr j V = 600 V CC R per Diode 0.66 K/W th(j-s) Module SKiiP 38AC12T4V1 M to heat sink 2 2.5 Nm s w95g Temperatur Sensor Features 1670 Trench 4 IGBTs R T =100C (R =1000 ) 100 C 25 3% Robust and soft freewheeling diodes in 2 R(T)=1000 1+A(T-25C)+B(T-25C) CAL technology -3 -1 R(T) , A = 7.635*10 C , Highly reliable spring contacts for -5 -2 B = 1.731*10 C electrical connections UL recognised file no. E63532 Typical Applications* Inverter up to 41 kVA Typical motor power 22 kW Remarks V , V = chip level value CEsat F Case temp. limited to T = 125C max. C (for baseplateless modules T = T ) C S product rel. results valid for T 150 j (recomm. T = -40 ... +150C) op For short circuit: Soft R Goff recommended AC 2 Rev. 3 05.12.2011 by SEMIKRON

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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