SKM75GB17E4 Semikron

SKM75GB17E4 Absolute Maximum Ratings Symbol Conditions Values Unit IGBT V T =25C 1700 V CES j I T =25C 125 A C c T = 175 C j T =80C 97 A c I 75 A Cnom I I = 3xI 225 A CRM CRM Cnom V -20 ... 20 V GES V = 1000 V CC SEMITRANS 2 t V 15 V T =150 C 10 s psc GE j V 1700 V CES T -40 ... 175 C j IGBT4 Modules Inverse diode I T =25C 88 A F c T = 175 C j SKM75GB17E4 T =80C 65 A c I 75 A Fnom I I = 2xI 150 A FRM FRM Fnom Features I t = 10 ms, sin 180, T =25C 510 A FSM p j IGBT4 = 4. generation medium fast T -40 ... 175 C j trench IGBT (Infineon) Module CAL4 = Soft switching 4. Generation CAL-Diode I 200 A t(RMS) Insulated copper baseplate using DBC T -40 ... 125 C stg Technology (Direct Copper Bonding) V AC sinus 50 Hz, t = 1 min 4000 V isol With integrated Gate resistor For switching frequenzies up to 8kHz Characteristics UL recognized, file no. E63532 Symbol Conditions min. typ. max. Unit Typical Applications* IGBT AC inverter drives UPS I =75A V C T =25C 1.93 2.18 V j CE(sat) Electronic welders V =15V GE T =150 C 2.28 2.60 V j Wind power chiplevel Public transport V T =25C 0.8 0.9 V CE0 j chiplevel T =150 C 0.7 0.8 V j Remarks r T =25C 15 17 m CE V =15V j GE Case temperature limited chiplevel to T = 125C max. T =150 C 21 24 m c j Recommended T = -40 ... +150C op V V =V , I = 3 mA 5.2 5.8 6.4 V GE(th) GE CE C Product reliability results valid I T =25 C 1mA CES V =0 V j GE for T = 150C j V = 1700 V CE T =150 C mA j C f=1MHz 6.8 nF ies V =25V CE C f=1MHz 0.28 nF oes V =0 V GE C f=1MHz 0.22 nF res Q V = - 8 V...+ 15 V 600 nC G GE R T =25C 8.5 Gint j V = 1200 V t CC T =150 C 187 ns d(on) j I =75A C t T =150 C 29 ns r j V = +15/-15 V GE E T =150 C 30 mJ on j R =2 G on t T =150 C 603 ns d(off) R =2 j G off di/dt = 2680 A/s t on T =150 C 140 ns f j di/dt =2480 A/s off du/dt = 5440 V/s E T =150 C 29 mJ off j R per IGBT 0.304 K/W th(j-c) GB by SEMIKRON Rev. 4.0 24.06.2015 1SKM75GB17E4 Characteristics Symbol Conditions min. typ. max. Unit Inverse diode I =75A V = V F T =25C 2.00 2.40 V F EC j V =0V GE T =150 C 2.14 2.56 V j chiplevel V T =25C 1.32 1.56 V j F0 chiplevel T =150 C 1.08 1.22 V j r T =25C 9.1 11 m j F chiplevel T =150 C 14 18 m j SEMITRANS 2 I =75A I F T =150 C 95 A j RRM di/dt =2860A/s off Q T =150 C 27 C j rr V =-15V GE E T =150 C 21 mJ rr j IGBT4 Modules V = 1200 V CC R per diode 0.632 K/W th(j-c) Module SKM75GB17E4 L 30 nH CE R T =25C 0.65 m CC +EE C terminal-chip T =125 C 1.09 m C Features R per module 0.04 0.05 K/W th(c-s) IGBT4 = 4. generation medium fast M to heat sink M6 3 5 Nm s trench IGBT (Infineon) CAL4 = Soft switching 4. Generation M to terminals M5 2.5 5 Nm t CAL-Diode Nm Insulated copper baseplate using DBC w 160 g Technology (Direct Copper Bonding) With integrated Gate resistor For switching frequenzies up to 8kHz UL recognized, file no. E63532 Typical Applications* AC inverter drives UPS Electronic welders Wind power Public transport Remarks Case temperature limited to T = 125C max. c Recommended T = -40 ... +150C op Product reliability results valid for T = 150C j GB 2 Rev. 4.0 24.06.2015 by SEMIKRON