SKN 400, SKR 400 I = 700 A (maximum value for continuous operation) V V FRMS RSM RRM I = 400 A (sin. 180 T = 100 C) FAV c V V 1800 1800 SKN 400/18 SKR 400/18 2000 2000 SKN 400/20 SKR 400/20 2400 2400 SKN 400/24 SKR 400/24 2700 2700 SKN 400/27 SKR 400/27 3000 3000 SKN 400/30 SKR 400/30 3600 3600 SKN 400/36 SKR 400/36 Stud Diode Symbol Condition Values Units Rectifier Diode I sin. 180 T = 85 (100) C 445 (400) A FAV C I K 0,55 T = 45 C B2 / B6 310 / 450 A SKN 400 D a K 0,55F T = 35 C B2 / B6 700 / 1000 A SKR 400 a I T = 25 C 10 ms 9000 A FSM vj T = 160 C 10 ms 7500 A vj Features 2 2 i t T = 25 C 8,3...10 ms 400000 A s vj Reverse voltages up to 3600 V 2 T = 160 C 8,3...10 ms 280000 A s vj Hermetic metal cases with glass insulator V T = 25 C, I = 1200 A max. 1,45 V F vj F Threaded stud M24 x 1,5 mm. V T = 160 C max. 0,9 V (TO) vj SKN: anode to stud r T = 160 C max. 0,5 m T vj SKR: cathode to stud I T = 160 C V = V max. 60 mA RD vj R RRM Q T = 160C, -di /dt = 10 A/s typ. 400 C rr vj F Typical Applications * K/W R 0,11 th(j-c) High voltage rectifier diode, K/W R 0,01 th(c-s) especially for traction T -40...+160 C vj applications T -55...+160 C stg Cooling via heatsinks Non-controllable and half- V - V~ isol controllable rectifiers M to heatsink (SI units) 60 Nm s Free-wheeling diodes to heatsink (US units) 531 lb.in. Recommended snubber 2 a 5 * 9,81 m/s network: m approx. 500 g RC: 1,0 F, 20 (P = 5W), R R : 25 K (P = 20 W) p R Case E 17 SKN SKR 1 2015-12-07 RP by SEMIKRON SKN 400, SKR 400 Fig. 1L Power dissipation vs. forward current Fig. 1R Power dissipation vs. ambient temperature Fig. 2 Forward current vs. case temperature Fig. 4 Transient thermal impedance vs. time Fig. 6 Surge overload current vs. time Fig. 5 Forward characteristics 2 2015-12-07 RP by SEMIKRON