G P 3 D 03 0 A 06 5B VDC 650 V Q 77 nC C I 30 A F 650V SiC Schottky Diode T ,max 175 C j T M Package A mp + Features Unipolar rectifier with surge current Zero reverse recovery current Fast, temperature-independent switching Avalanche tested to 200mJ* T M A mp + Benefits Zero switching loss Higher efficiency Smaller heat sink Easy to parallel Part Package Marking GP3D030A065B TO-247-2L 3D030A065 T M A mp + Applications Switch mode power supplies, UPS Power factor correction EV charging stations Output rectification Maximum Ratings, at T =25 C, unless otherwise specified j Characteristics Symbol Conditions Values Unit T =25 C, T=175 C 85 C j I ** T =125 C, T=175 C Continuous forward current 45 A F C j T =150 C, T=175 C 29 C j T =25 C, t =8.3 ms 200 C p Surge non-repetitive forward current I A FSM sine halfwave T =110 C, t =8.3 ms 175 C p Non-repetitive peak forward current I T =25 C, t =10 s 1100 A C p F,max T =25 C, t =8.3 ms 166 C p 2 2 2 i t value i dt A s T =110 C, t =8.3 ms 127 C p Repetitive peak reverse voltage V T=25 C 650 V RRM j Turn-on slew rate, Diode dv/dt ruggedness 200 V/ns dv/dt repetitive Power dissipation T =25 C 300 W P ** tot C Operating junction & storage T, T Continuous -55175 C j storage temperature Soldering temperature T Wave soldering leads 260 C solder Mounting torque M3 Screw 1 N-m Notes: * EAS of 200 mJ is based on starting Tj = 25C, L = 1.0 mH, IAS = 20.00 A, V = 50 V. ** Typical Rth used JC Rev. 1.2, 2/20/2020 www.SemiQ.com p.1TM 650V SiC Schottky Diode A m p + G P 3 D 03 0 A 06 5B Electrical Characteristics, at T =25 C, unless otherwise specified j Values Characteristics Symbol Conditions Unit min. typ. max. T=25 C DC blocking voltage V 650 - - V j DC I =30A, T=25 C - 1.53 1.65 F j Diode forward voltage V I =30A, T=125 C - 1.67 - V F F j I =30A, T=175 C - 1.81 2.20 F j V =650V, T=25 C - 4 75 R j Reverse current I V =650V, T=125 C - 28 - mA R R j V =650V, T=175 C - 102 750 R j Total capacitive charge Q V =400V, T=25 C - 77 - nC C R j V =1V, f=1 MHz - 1247 - R Total capacitance C V =200V, f=1 MHz - 146 - pF R V =400V, f=1 MHz - 122 - R Thermal Characteristics Values Characteristics Symbol Conditions Unit min. typ. max. o Thermal resistance, junction-case R - - 0.50 0.85 C/W thJC Typical Performance 60 1.E-04 -55C -55C 25C 25C 50 75C 75C 1.E-05 125C 125C 40 175C 175C 30 1.E-06 20 1.E-07 10 0 1.E-08 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 100 200 300 400 500 600 V (V) V (V) F R Fig. 1 Forward Characteristics (parameterized on T) Fig. 2 Reverse Characteristics (parameterized on T) j j Rev. 1.2, 2/20/2020 www.SemiQ.com p.2 I (A) F I (A) R