1N5550 THRU 1N5554 3SM2 THRU 3SM0 Axial Leaded Hermetically Sealed Standard Recovery Rectifier Diode POWER DISCRETES Features Description Quick reference data Low reverse leakage current Hermetically sealed in fused metal oxide V = 200 - 1000V R Good thermal shock resistance I 5.0A F = Low forward voltage drop t = 2S rr Avalanche capability V = 1.0V F These products are qualified to MIL-PRF-19500/420. They can be supplied fully released as JAN, JANTX, JANTXV, and JANS versions. Absolute Maximum Ratings Electrical specifications T = 25C unless otherwise specified. A 1N5550 1N5551 1N5552 1N5553 1N5554 Symbol Units 3SM2 3SM4 3SM6 3SM8 3SM0 WVorking Reverse Voltage 2000 400 600 800 1V00 RWM Average Forward Current 55C in free air, lead length I 5A.0 F(AV) 0.375 Repetitive Surge Current 55C in free air, lead length I 2A5 FRM 0.375 Non-Repetitive Surge Current (tp = 8.3mS V & T ) I 100 A R JMAX FSM (tp = 8.3mS, V & 25C) 150 R STtorage Temperature Range -C65 to +175 STG Revision: September 22, 2008 1 www.semtech.com1N5550 THRU 1N5554 3SM2 THRU 3SM0 POWER DISCRETES Electrical Specifications S0ymbol 1N555 1N5551 1N5552 1N5553 1N5554 Units 3SM2 3SM4 3SM6 3SM8 3SM0 Average Forward Current (sine wave) - max. T = 55C I 3.0 A A F(AV) - max. L = 3/8 T = 55C I 5.0 L F(AV) 2 2 2 ItIfor fusing (t = 8.3mS) max t24A S Forward Voltage Drop max. I = 3.0A, T=V25C 1V.0 F j F Reverse Current max. V,CTj = 25 I 1.0 A RWM R V,CTj = 125 I 60 RWM R Reverse Recovery Time max. t0rr 2S. 0.5A I to 1.0A I recovers to 0.25A I F RM RM(REC) Junction Capacitance typ. C2j 9Fp V = 5V, f = 1MHz R Thermal Characteristics 1N5550 1N5551 1N5552 1N5553 1N5554 Symbol Units 3SM2 3SM4 3SM6 3SM8 3SM0 Thermal Resistance-Junction to Lead Lead length = 0.375 R 22 C/W JL Lead length = 0.0 R 4 JL Thermal Resistance-Junction to Ambient on 0.06 thick pcb. 1 oz. R 4W7 C/ JA copper Typical Characteristics Fig 1. Typical junction capacitance as a function of reverse voltage. www.semtech.com 2008 Semtech Corp. 2