1N6638, 1N6642, 1N6643 Axial Leaded Hermetically Sealed Switching Diodes HIGH-RELIABILITY PRODUCTS Features Quick reference data Low reverse leak age cur rent V = 75 - 150V BR Her metically sealed in fused metal oxide t = 4.5 - 6.0ns rr G ood ther mal shock resistance o I = 300mA, T = 75 C o A Low for ward voltage drop V = 1.1 -1.2V F These produc ts are qualified to MIL-PRF-19500/578. They can be supplied fully released as JAN, JANT X, JANT X V and JANS. Absolute Maximum Rating o Elec tr ical specifications T = 25 C unless other wise specified. A Parameter Symbol 1N6638 1N6642 1N6643 Units Breakdown Voltage V 150 100 75 V BR Wor k ing R everse Voltage V 125 75 50 V RWM Operating Cur rent I 300 300 300 mA O 75 C , lead length 0.375 Non-R epetitive Surge Cur rent I 2.5 2.5 2.5 A FSM (tp = 8.3ms, 25 C ) O Storage Temperature R ange T -65 to +175 C STG 1N6638, 1N6642, 1N6643 1 of 4 www.semtech.com Final Datasheet Rev 1.0 Semtech 9/27/2016 Proprietary & ConfidentialO Electrical Characteristics (T=25 C unless otherwise specified) Parameter Symbol 1N6638 1N6642 1N6643 Units For ward Voltage Drop max. at V 0.8 0.8 0.8 V F1 10mA, T = 25 C j For ward Voltage Drop max. V 1.1 I = 200mA 1.2 I = 100mA 1.2 I = 100mA V F2 F F F T = 25 C j R everse Cur rent max. I V = 20V I 35 25 50 nA R1 R R1 I V = V I 500 500 500 nA R2 R RWM R2 I V = 20V, T = 150 C I 50 50 75 uA R3 R A R3 I V = V , T = 150 C I 100 100 100 uA R4 R RWM A R4 Foward R ecover y Time max. t 20 20 20 ns fr I = 200mA F R everse R ecover y Time max. t 4.5 5.0 6.0 ns rr I = I = 10mA RM F Junc tion Capacitance t yp. C 2.5 5.0 5.0 pF T 1 V = 0V R Thermal Characteristics Parameter Symbol 1N6638 1N6642 1N6643 Units Ther mal R esistance -Junc tion to Lead R 150 C/W J L Lead length = 0.375 1N6638, 1N6642, 1N6643 2 of 4 www.semtech.com Final Datasheet Rev 1.0 Semtech 9/27/2016 Proprietary & Confidential