SMF05 and SMF12 TVS Diode Array For ESD and Latch-Up Protection PPROTECTION PRODUCTSROTECTION PRODUCTS Features Description The SMF series TVS arrays are designed to protect sen- Transient protection for data lines to sitive electronics from damage or latch-up due to ESD IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) and other voltage-induced transient events. They are IEC 61000-4-4 (EFT) 40A (5/50ns) designed for use in applications where board space is at Small package for use in portable electronics a premium. Each device will protect up to four lines. Protects four I/O lines They are unidirectional devices and may be used on lines Working voltage: 5V and 12V where the signal polarities are above ground. Low leakage current TVS diodes are solid-state devices designed specifically Low operating and clamping voltages for transient suppression. They feature large cross-sec- Solid-state silicon-avalanche technology tional area junctions for conducting high transient cur- rents. They offer desirable characteristics for board level Mechanical Characteristics protection including fast response time, low operating EIAJ SC70-5L package and clamping voltage, and no device degradation. Molding compound flammability rating: UL 94V-0 The SMF series devices may be used to meet the immu- Marking : Marking Code nity requirements of IEC 61000-4-2, level 4. The small Packaging : Tape and Reel SC70 package makes them ideal for use in portable elec- tronics such as cell phones, PDAs, notebook comput- Applications ers, and digital cameras. Cellular Handsets and Accessories Cordless Phones Personal Digital Assistants (PDAs) Notebooks & Handhelds Portable Instrumentation Digital Cameras Peripherals MP3 Players Circuit Diagram Schematic & PIN Configuration 13 45 1 5 2 34 2 SC70-5L (Top View) www.semtech.com Revision 01/22/08 1SMF05 and SMF12 PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit Peak Pulse Power (tp = 8/20sP) 2s00 Watt pk 1.5 Peak Forward Voltage (I = 1A, tp=8/20sV) V F FP ESD per IEC 61000-4-2 (Air) 20 V kV ESD ESD per IEC 61000-4-2 (Contact) 15 o LTead Soldering Temperature 260 (10 seconds) C L o OTperating Temperature -55 to +125 C J o STtorage Temperature -55 to +150 C STG Electrical Characteristics SMF05 Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 5V RWM RVeverse Breakdown Voltage I=61mA V BR t RIeverse Leakage Current V=05V, T=25C 1A R RWM CVlamping Voltage I = 1A, t=58/20s 9V. C PP p CVlamping Voltage I = 12A, t=58/20s 1V2. C PP p PIeak Pulse Current t=28/20s 1A PP p JCunction Capacitance Between I/O pins and 1550 1F7 p j Ground V = 0V, f = 1MHz R SMF12 Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 1V2 RWM RVeverse Breakdown Voltage I=31mA1V3. BR t RIeverse Leakage Current V=112V, T=25C A R RWM CVlamping Voltage I = 1A, t=98/20s 1V C PP p CVlamping Voltage I = 8A, t=58/20s 2V C PP p PIeak Pulse Current t=88/20s A PP p JCunction Capacitance Between I/O pins and 650 7Fp j Ground V = 0V, f = 1MHz R www.semtech.com 2008 Semtech Corp. 2