Product Information

UCLAMP3306P.TCT

UCLAMP3306P.TCT electronic component of Semtech

Datasheet
ESD Suppressors / TVS Diodes 3.3V ESD PROTECTION ARRAY

Manufacturer: Semtech
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1627 ea
Line Total: USD 1.16

2978 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7560 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1
1 : USD 0.7291
10 : USD 0.6118
100 : USD 0.5509
250 : USD 0.5485
500 : USD 0.4876
1000 : USD 0.4071
3000 : USD 0.3887
6000 : USD 0.3887
9000 : USD 0.3738

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Current Rating
Operating Temperature Range
Brand
Operating Supply Voltage
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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uClamp3306P Low Voltage TVS for ESD Protection TM PROTECTION PRODUCTS - MicroClampPROTECTION PRODUCTS Features Description TM The Clamp series of TVS arrays are designed to Transient protection for data lines to protect sensitive electronics from damage or latch-up IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) due to ESD, lightning, and other voltage-induced IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) transient events. Each device will protect up to six lines Small package for use in portable electronics operating at 3.3 volts. Protects Six I/O Working voltage: 3.3V TM The Clamp 3306P is a solid-state device designed Low leakage current specifically for transient suppression. It is constructed Low operating and clamping voltages using Semtechs proprietary EPD process technology. Solid-state silicon-avalanche technology The EPD process provides low standoff voltages with significant reductions in leakage currents and capaci- Mechanical Characteristics tance over traditional pn junction processes. They offer SLP1616P6 package desirable characteristics for board level protection RoHS/WEEE Compliant including fast response time, low clamping voltage and no device degradation. Nominal Dimensions: 1.6 x 1.6 x 0.58 mm Lead Pitch: 0.5mm The Clamp3306P may be used to meet the immunity Lead Finish: NiPd requirements of IEC 61000-4-2, level 4 (15kV air, Marking : Orientation Mark and Marking Code 8kV contact discharge). It is packaged in an ultra Packaging : Tape and Reel per EIA 481 small SLP1616P6 package with a low profile of only 0.58mm. The leads are spaced at a pitch of 0.5mm Applications and are finished with lead-free NiPd. The small package Cellular handsets and accessories makes it ideal for use in portable electronics such as cell Notebooks and handhelds phones, digital still cameras, and notebook computers. MP3 Players Digital cameras Portable instrumentation Circuit Diagram Package 1.6 1 1 2 3 5 6 4 1.6 6 0.5 0.6 Center Tab (GND) Device Schematic 6 Pin SLP package (Bottom Side View) 1.6 x 1.6 x 0.58mm (Nominal) www.semtech.com Revision 01/17/2007 1uClamp3306P PROTECTION PRODUCTS Absolute Maximum Rating Rlating Seymbo Vsalu Unit PPeak Pulse Power (tp = 8/20s) 4s0 Watt pk M)aximum Peak Pulse Current (tIp = 8/20s 5sAmp pp ESD per IEC 61000-4-2 (Air) V +/- 20 kV PP ESD per IEC 61000-4-2 (Contact) +/- 15 OTperating Temperature -C55 to +125 J STtorage Temperature -C55 to +150 STG o Electrical Characteristics (T=25 C) Plarameter SsymboCmondition MlinimuTmypicaMsaximu Unit RVeverse Stand-Off Voltage 3V.3 RWM PVunch-Through Voltage I=52 A3V. PT PT SVnap-Back Voltage I=850mA2V. SB SB RIeverse Leakage Current V=53.3V 05.0 0A. R RWM CVlamping Voltage I = 1A, tp = 8/20 s 5V.5 C PP Any I/O to Gnd CVlamping Voltage I = 5A, tp = 8/20 s 8V.0 C PP Any I/O to Gnd RVeverse Clamping Voltage I = 1A, tp = 8/20 s 2V.4 CR PP Any I/O to Gnd I/O pin to Gnd 250 2Fp JCunction Capacitance V = 0V, f = 1MHz j R I/O pin to Gnd 1F2 p V = 3.3V, f = 1MHz R I/O pin to I/O pin 150 1F2. p V = 0V, f = 1MHz R I/O pin to I/O pi n 7F.5 p V = 3.3V, f = 1MHz R www.semtech.com 2007 Semtech Corp. 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SEM
Semtech
Semtech Corporation
SEMTECH ELECTRONICS LIMITED
SEMTECH INTERNATIONAL
ST(Semtech)

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