M505012F-YEB Sensata

M505012F-YEB electronic component of Sensata Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of M505012F-YEB Discrete Semiconductor Modules across the USA, India, Europe, Australia, and various other global locations. M505012F-YEB Discrete Semiconductor Modules are a product manufactured by Sensata. We provide cost-effective solutions for Discrete Semiconductor Modules, ensuring timely deliveries around the world.

Part No. M505012F-YEB
Manufacturer: Sensata
Category: Discrete Semiconductor Modules
Description: Discrete Semiconductor Modules 50A 600V SCR CC MODULE POWER
Datasheet: M505012F-YEB Datasheet (PDF)
Price (USD)
1: USD 105.541 ea
Line Total: USD 105.54 
Availability : 0
  
QtyUnit Price
1$ 105.541

Availability 0
Ship by Mon. 20 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 105.541

   
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We are delighted to provide the M505012F-YEB from our Discrete Semiconductor Modules category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the M505012F-YEB and other electronic components in the Discrete Semiconductor Modules category and beyond.

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M50 Series Over 40KW output Capability 8 Different Circuits to Choose from 50 and 100A outputs UL Recognized E72445 AVAILABLE OPTIONS ELECTRICAL SPECIFICATIONS Description Symbol M5050 M50100 Maximum DC Output Current (Tc = 85C) I 50 A 100 A D Maximum Voltage Drop @ Amps Peak 1.7V @ 50A 1.4V @ 100A V F Operating Junction Temperature Range -40 - 125C -40 - 125C T J Critical Rate of Rise of On-State Current @ TJ=125C 100A/s 100A/s di/dt Critical Rate of Rise of Off-State Voltage [V/s] dv/dt 500V/s 500V/s Repetitive Peak Reverse Voltage (AC Line Nominal) [Vpk] 400 (120 VAC) V RRM 600 (240 VAC) 800 (280 VAC) 1200 (480 VAC) Maximum Non-Repetitive Surge Current (1/2 Cycle, 60 Hz) [A] 600 1500 ITSM 2 Maximum IT for Fusing (t=8.3ms) [Asec] I T 1500 9350 Maximum Required Gate Current to Trigger @ 25C [mA] 150 150 I GT Maximum Required Gate Voltage to Trigger @ 25C [V] 3.0 3.0 V GT Average Gate Power [W] 0.5 0.5 PG(AV) Maximum Peak Reverse Gate Voltage [V] V 5.0 5.0 GM Maximum Thermal Resistance, Junction to Ceramic Base per Chip [C/W] R 0.7C/W 0.36C/W JC Isolation Voltage [Vrms] 2500 2500 V ISOL GENERAL SPECIFICATIONS Description Weight (typical) 3.75 oz (106g) 3.75 oz (106g)MECHANICAL SPECIFICATIONS CIRCUIT DIAGRAMS AGENCY APPROVALS E72445 Rev 121411

Tariff Desc

8541.30.00 20 No - Thyristors, diacs and triacs, other than photo- sensitive devices Free
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