JANTX1N5619 Sensitron

JANTX1N5619 electronic component of Sensitron
JANTX1N5619 Sensitron
JANTX1N5619 ESD Protection Diodes / TVS Diodes
JANTX1N5619  Circuit Protection
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of JANTX1N5619 ESD Protection Diodes / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. JANTX1N5619 ESD Protection Diodes / TVS Diodes are a product manufactured by Sensitron. We provide cost-effective solutions for ESD Protection Diodes / TVS Diodes, ensuring timely deliveries around the world.

Part No. JANTX1N5619
Manufacturer: Sensitron
Category: ESD Protection Diodes / TVS Diodes
Description: ESD Suppressors / TVS Diodes D MET 1A FAST 600V HR
Datasheet: JANTX1N5619 Datasheet (PDF)
Price (USD)
500: USD 7.125 ea
Line Total: USD 3562.5 
Availability : 0
  
QtyUnit Price
500$ 7.125

Availability 0
Ship by Fri. 14 Nov to Thu. 20 Nov
MOQ : 500
Multiples : 1
QtyUnit Price
500$ 7.125

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the JANTX1N5619 from our ESD Protection Diodes / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the JANTX1N5619 and other electronic components in the ESD Protection Diodes / TVS Diodes category and beyond.

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WWW.Microsemi .COM 1N5615 1N5623 1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION DESCRIPTION APPEARANCE This fast recovery rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal Category I metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a US suffix (see separate data sheet for 1N5615US thru 1N5623US). Microsemi also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device A Package types in both through-hole and surface mount packages. IMPORTANT: For the most current data, consult MICROSEMIs website: WWW.Microsemi .COM 1N5615 1N5623 1N5615 thru 1N5623 VOIDLESS-HERMETICALLY SEALED FAST RECOVERY GLASS RECTIFIERS SCOTTSDALE DIVISION SYMBOLS & DEFINITIONS Symbol Definition V Minimum Breakdown Voltage: The minimum voltage the device will exhibit at a specified current BR Working Peak Reverse Voltage: The maximum peak voltage that can be applied over the operating V RWM temperature range Average Rectified Output Current: Output Current averaged over a full cycle with a 50 hZ or 60 Hz sine-wave I O input and a 180 degree conduction angle Maximum Forward Voltage: The maximum forward voltage the device will exhibit at a specified current V F Maximum Leakage Current: The maximum leakage current that will flow at the specified voltage and I R temperature C Capacitance: The capacitance in pF at a frequency of 1 MHz and specified voltage Reverse Recovery Time: The time interval between the instant the current passes through zero when changing from the forward direction to the reverse direction and a specified decay point after a peak reverse t rr current occurs. GRAPHS FIGURE 1 FIGURE 2 MAXIMUM CURRENT vs LEAD TEMPERATURE TYPICAL REVERSE CURRENT vs PIV Copyright 2007 Microsemi Page 2 1-15-2007 REV D Scottsdale Division 8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
SENSITRON SEMICONDUCTOR
Sensitron Semiconductors
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