SchottkyBarrierDiode Twin OUTLINE UUnniittmmmm PackageITO-3P3pin D25SC6M 60V25A 0000 D25SC6M VF Feature FullMolded HighRecoverySpeed LowVF Web Fordetailsoftheoutlinedimensions,refertoourwebsite.Asforthe marking,refertothespecificatioMarking,TerminalConnectio. RATINGS AbsoluteMaximumRatings Tc25 Item Symbol Conditions Ratings Unit Tstg 40150 StorageTemperature Tj 150 OperationJunctionTemperature VRM 60 V MaximumReverseVoltage 0.5msduty1/40 VRRSM 65 V RepetitivePeakSurgeReverseVoltage Pulsewidth0.5ms,duty1/40 50Hz Io/Tc Io 25 A AverageRectifiedForwardCurrent 50Hzsinewave,Resistanceload,Withheatsink, PerdiodeIo/2,Tc=117C 50Hz1Tj125 IFSM 300 A PeakSurgeForwardCurrent 50Hzsinewave,Non-repetitive1cyclepeakvalue,Tj=125C 10s1Tj25 PRRSM 660 W RepetitivePeakSurgeReversePower Pulsewidth10s,Perdiode,Tj=25C AC1 Vdis 1.5 kV DielectricStrength Terminalstocase,AC1minute 0.5Nm TOR 0.8 Nm MountingTorque (Recommendedtorque:0.5Nm) ElectricalCharacteristics Tc25 1 MAX VF IF.A, 0.58 V ForwardVoltage Pulsemeasurement,Perdiode 1 MAX IR VRVRM, 10 mA ReverseCurrent Pulsemeasurement,Perdiode 1 TYP Cj fMHz,VRV, 490 pF JunctionCapacitance Perdiode MAX jc 1.5 /W ThermalResistance Junctiontocase J533-p2013.07 www.shindengen.co.jp/product/semi/D25SC6M CHARACTERISTICDIAGRAMS Forward Voltage Forward Power Dissipation Peak Surge Forward Current Capability Reverse Current Reverse Power Dissipation Junction Capacitance Tc-Io Derating Curve Tc-Io Repetitive Surge Reverse Power Derating Curve Repetitive Surge Reverse Power Capability Sinewave50Hz 50Hzsinewaveisusedformeasurements. J533-p2013.07 www.shindengen.co.jp/product/semi/