3 Phase Bridge Diode Large o Single In-line Package I OUTLINE Unit : mm PackageTSB-5PIN D45XT80 Weight : 22gtyp. 800V 45A SHINDENGEN SIP D45XT 80 0264 UL E142422 Feature 3 Phase-Bridge Thin-SIP UL E142422 High Thermal Radiation Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection. RATINGS D45XT80 Type No. Symbol Item Conditions Unit Storage Temperature Operation Junction Temperature Maximum Reverse Voltage With heatsink Average Rectified Forward Current 50Hz sine wave, Resistance load Without heatsink Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 per diode Current Squared Time Terminals to case, AC 1 minute. Dielectric Strength Except top opposite side of the terminal side of the mold case. Mounting Torque Recommended torque : 1.2 N m Forward Voltage Pulse measurement, per diode Pulse measurement, per diode Reverse Current Junction to Case Thermal Resistance Junction to Ambient J534-1 184Thin SIP 3 Phase UL Bridge D45XT80 CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical Semiconductor products generally have characterristic variation. Typical is a statistical average of the devices ability. J534-1 185