Bridge Diode Dual In-Line Package OUTLINE Package 1N SMD S1NB 800V 1A S1NB I 6094 I Package 1N THD S1NB 6099 PS EFUBJMT PG PVUMJOF EJNFOTJPOT SFGFS UP PVS XFC TJUF PS UIF 4FNJDPOEVDUPS 4IPSU PSN BUBMPH T GPS UIF NBSLJOH SFGFS UP UIF TQFDJDBU JPO i.BSLJOH 5FSNJOBM POOFDUJPO u RATINGS Absolute Maximum Ratings l S1NB20 S1NB60 S1NB80 Type No. Unit Item Symbol Conditions Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current 50Hz sine wave, Resistance load, On glass-epoxy substrate, Ta=25 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 Peak Surge Forward Current Current Squared Time per diode Electrical Characteristics l Forward Voltage Pulse measurement, per diode Pulse measurement, per diode Reverse Current l Junction to Lead Thermal Resistance Junction to Ambient J534 20 Small DIP Bridge S1NB CHARACTERISTIC DIAGRAMS ) TJOF XBWF JT VTFE GPS NFBTVSFNFOUT 4FNJDPOEVDUPS QSPEVDUT HFOFSBMMZ IBWF DIBSBDUFSSJTUJD WBSJBUJPO 5ZQJDBM JT B TUBUJTUJDBM BWFSBHF PG UIF EFWJDFhT BCJMJUZ J534 21