S1ZB60-7101 Bridge Diodes 600V, 0.8A OUTLINE Feature Small DIP (There is also SMD) Package (House Name): 1Z High Reliability Pb free terminal RoHS:Yes Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tl=25 ) Item Symbol Conditions Ratings Unit Storage temperrature Tstg -40 to 150 Junction temperature Tj -40 to 150 Repetitive peak reverse voltage V 600 V RRM Average forward current I (AV) 50Hz sine wave, Resistance load, Tl=117 0.8 A F 50Hz sine wave, Resistance load, On alumina Average forward current I (AV) 0.8 A F substrate, Ta=25 50Hz sine wave, Resistance load, On glass-epoxy Average forward current I (AV) 0.5 A F substrate, Ta=25 50Hz sine wave, Non-repetitive 1 cycle peak value, Surge forward current I 30 A FSM Tj=25 2 Current squared time I t 1ms tp 10ms, Tj=25 , per diode 4.5 A s See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 1/5 S1ZB60-7101 Rev.02(2020.12)Electrical Characteristics (unless otherwise specified : Tl=25 ) Ratings Item Symbol Conditions Unit MIN TYP MAX Forward voltage V IF=0.4A, Pulse measurement, per diode 1.05 V F Reverse current I VR=600V, Pulse measurement, per diode 10 A R Thermal resistance Rth(j-l) Junction to lead 20 /W Thermal resistance Rth(j-a) Junction to ambient, On alumina substrate 76 /W Thermal resistance Rth(j-a) Junction to ambient, On glass-epoxy substrate 134 /W See the original Specifications Shindengen Electric Manufacturing Co., Ltd. 2/5 S1ZB60-7101 Rev.02(2020.12)