SMD/DIP Bridge Diode OUTLINE Package 1Z SMD S1ZB 800V 0.8A Z62N I I Package 1Z DIP Z60N For details of outline dimensions, refer to our web site or the Semiconductor Terminal Connection. RRATINGATINGSS Absolute Maximum Ratings l S1ZB60 S1ZB80 TypeNo. Symbol Item Conditions Unit Storage Temperature Operation Junction Temperature Maximum Reverse Voltage On alumina substrate 50Hz sine wave, Average Rectified Forward Current Resistance load, Ta=25 On glass-epoxy substrate Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Tj= 25 Current Squared Time per diode Electrical Characteristics l Forward Voltage Pulse measurement, per diode Pulse measurement, per diode Reverse Current l Junction to Lead Thermal Resistance On alumina substrate Junction to Ambient On glass-epoxy substrate J534 -p 2014.03 S1ZB CHARACTERISTIC DIAGRAMS DIP 50Hz sine wave is used for measurements. J534 -p 2014.03