SQ I P Bridge Diode Square In-line Package OUTLINE Unit : mm PackageS4VB S4VB60 Weight : 5.2gtyp. 600V 4A IR Feature S4VB High-Reliability 60 6N Heat Resistance Low IR Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification Marking, Terminal Connection. RATINGS RATINGS Absolute Maximum Ratings l S4VB60 Type No. Symbol Item Conditions Unit Storage Temperature Operation Junction Temperature Maximum Reverse Voltage With heatsink 50Hz sine wave, Average Rectified Forward Current Resistance load, Ta = 40 Without heatsink Peak Surge Forward Current 50Hz sine wave, Non-repetitive 1cycle peak value, Tj = 25 per diode Current Squared Time Mounting Torque Recommended torque : 0.5 N m Electrical Characteristics l Forward Voltage Pulse measurement, per diode Pulse measurement, per diode Reverse Current l Thermal Resistance Junction to Lead J534-1 32SQIP Bridge S4VB60 CHARACTERISTIC DIAGRAMS Sine wave 50Hz 50Hz sine wave is used for measurements. Typical Semiconductor products generally have characterristic variation. Typical is a statistical average of the devices ability. J534-1 33