Product Information

SVD540T

SVD540T electronic component of Silan

Datasheet
MOSFET N Trench 100V 33A (Tc) 4V @ 250uA 44 mΩ @ 16A,10V TO-220-3L RoHS

Manufacturer: Silan
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3984 ea
Line Total: USD 1.99

48 - Global Stock
Ships to you between
Fri. 31 May to Wed. 05 Jun
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
33 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

SVD540T
Silan

5 : USD 0.362
50 : USD 0.2918
150 : USD 0.2607
500 : USD 0.2218
2000 : USD 0.2046
5000 : USD 0.1942

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SVD540T with MOSFET N Trench 100V 33A (Tc) 4V @ 250uA 44 m? @ 16A, 10V TO-220-3L RoHS is a dual-level MOSFET manufactured by Silan, specifically designed for power switching applications. It is composed of two N-channel Trench-gate MOSFETs that are rated for 100V and 33A. The device's specific features include a Thermal Resistance of 4V @ 250uA, a Gate Threshold voltage range of 44 m? @ 16A, and a Drain-Source voltage of up to 10V. It is packaged in a TO-220-3L RoHS compliant package that is suitable for high temperature reflow soldering.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Hangzhou Silan Microelectronics

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