Product Information

SPC20N65G

SPC20N65G electronic component of Sinai Power

Datasheet
TO-220F-3 MOSFETs ROHS

Manufacturer: Sinai Power
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1458 ea
Line Total: USD 1.15

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

SPC20N65G
Sinai Power

1 : USD 1.1458
10 : USD 0.8656
30 : USD 0.814
100 : USD 0.7647
500 : USD 0.7399
1000 : USD 0.7288

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Reverse Transfer Capacitance Crss@Vds
Type
Input Capacitance Ciss@Vds
Total Gate Charge Qg@Vgs
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The SPC20N65G with TO-220F-3 MOSFETs ROHS manufactured by Sinai Power is a type of insulated gate bipolar transistor (IGBT) made to provide high-voltage power switching capabilities with low-power dissipation. It is a series of N-Channel Enhancement Mode MOSFETs featuring reduced gate charge, low on-state resistance, fast turn-off, and short reverse-body diode recovery times. This MOSFETs has a maximum voltage of 650V, a current limit of 20A, and a power dissipation of 54W. It is RoHS compliant and is suitable for applications such as motor control, switching power supplies, uninterruptible power supplies, AC motors, DC-to-DC converters, and more.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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