Product Information

SE60210GA

Name: SE60210GA
Brand: SINO-IC
SKU: SE60210GA_SINOIC
Availability: OutOfStock
Rating: 5 (11 reviews)

SE60210GA electronic component of SINO-IC

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Datasheet

MOSFET N Trench 60V 210A 4V @ 250uA 2.6 mÎ© @ 20A,10V TO-220 RoHS

Manufacturer: SINO-IC

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.8661 ea
Line Total: USD 0.87

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Fri. 31 May MOQ : 1 Multiples : 1 SE60210GA SINO-IC	1 : USD 0.9194 10 : USD 0.7668 50 : USD 0.64 100 : USD 0.5628 500 : USD 0.5177 1000 : USD 0.4941

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Additional Infomation About Product

The SE60210GA is a MOSFET N Trench manufactured by Sino-IC. It is rated for 60V and 210A, with a low gate voltage of 4V @ 250uA and a low on-resistance of 2.6 mO @ 20A, 10V. It is built into a TO-220 package and is compliant with RoHS standards.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

SINO-IC may also be referenced as

SINO-IC

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Manufacturer SINO-IC SINO-IC
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 220 TO - 220
Brand Category SINO-IC SINO-IC
Fet Type n trench n trench
Drain To Source Voltagevdss 60 V 60 V
Continuous Drain Current Id @ 25°C 210 A 210 A
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 2.6 m @ 20a,10v 2.6 m @ 20a,10v
Power Dissipation-Max Ta 300 W 300 W
Drain Source Voltage Vdss 60 V 60 V
Continuous Drain Current Id 210 A 210 A
Power Dissipation Pd 300 W 300 W
Drain Source On Resistance Rdson@Vgs Id 2.6 mOhms @10V , 20A 2.6 mOhms @10V , 20A
Gate Threshold Voltage Vgsth@Id 4 V @250uA 4 V @250uA
Type N Channel N Channel