Product Information

TSF18N60MR

TSF18N60MR electronic component of Truesemi

Datasheet
MOSFET N Trench 600V 18A (Tc) 5V @ 250uA 450 mΩ @ 9A,10V TO-220F RoHS
Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9264 ea
Line Total: USD 0.93

6 - Global Stock
Ships to you between
Fri. 10 May to Wed. 15 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6 - Global Stock


Ships to you between
Fri. 10 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

TSF18N60MR
Truesemi

1 : USD 0.9706
10 : USD 0.8128
50 : USD 0.6807
100 : USD 0.6017
500 : USD 0.5545
1000 : USD 0.5307

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The TSF18N60MR is a Mosfet N Trench MOSFET manufactured by Truesemi. It is a 600 volt 18A (Tc) 5 Volt device with a maximum drain to source on-state resistance of 450 mO @ 9A, 10V. It is housed in a TO-220F RoHS-compliant package. Its maximum Gate to Source voltage rating is 30V and it provides fast switching with low gate charge (Qg) of 9.6 nC at VGS = 10V. It features excellent thermal stability with maximum operating junction temperature of 150°C. This part is suitable for switching and DC-DC power conversion applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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