Product Information

SE80130G

SE80130G electronic component of SINO-IC

Datasheet
MOSFET N Trench 80V 130A 4.5V @ 250uA 4.3 mΩ @ 60A,10V TO-263 RoHS

Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.993 ea
Line Total: USD 0.99

31 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
21 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

SE80130G
SINO-IC

1 : USD 1.2267
10 : USD 1.0093
50 : USD 0.9025
100 : USD 0.7937
500 : USD 0.7313
1000 : USD 0.697

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SE80130G is a MOSFET N Trench manufactured by SINO-IC, with a voltage rating of 80V and current rating of 130A. It has a drain-source breakdown voltage of 4.5V @ 250uA, and a drain-source on state resistance of 4.3mO @ 60A. The package type is a TO-263 RoHS package, making it suitable for surface mount applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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