Product Information

SED8840

SED8840 electronic component of SINO-IC

Datasheet
MOSFET 2 N Channel(Double)Common Drain 20V 10A 1V @ 250uA 9.5 mΩ @ 10A,4.5V DFN5x2 RoHS

Manufacturer: SINO-IC
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2167 ea
Line Total: USD 1.08

0 - Global Stock
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

SED8840
SINO-IC

5 : USD 0.2167
50 : USD 0.1753
150 : USD 0.1574
500 : USD 0.1205
2500 : USD 0.1106
5000 : USD 0.1014

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The SED8840 MOSFET is a dual N-channel common drain device, manufactured by SINO-IC. It is designed for switching applications and provides a maximum voltage rating of 20V and current rating of 10A. The gate-source threshold voltage is 1V @ 250uA, on-resistance is 9.5 mΩ @ 10A, and its drain-source breakdown voltage is 4.5V. It is packaged in a 5mm x 2mm DFN form factor and is RoHS compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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