SiT8209
High Frequency, Ultra Performance Oscillator
The Smart Timing Choice
The Smart Timing Choice
Features Applications
Any frequency between 80.000001 and 220 MHz accurate to 6 SATA, SAS, Ethernet, 10-Gigabit Ethernet, SONET, PCI
decimal places Express, video, Wireless
100% pin-to-pin drop-in replacement to quartz-based oscillators Computing, storage, networking, telecom, industrial control
Ultra low phase jitter: 0.5 ps (12 kHz to 20 MHz)
Frequency stability as low as 10 PPM
Industrial or extended commercial temperature range
LVCMOS/LVTTL compatible output
Standby or output enable modes
2
Standard 4-pin packages: 2.5 x 2.0, 3.2 x 2.5, 5.0 x 3.2, 7.0 x 5.0 mm
Outstanding silicon reliability of 2 FIT or 500 million hour MTBF
Pb-free, RoHS and REACH compliant
Ultra short lead time
Electrical Characteristics
Parameter Symbol Min. Typ. Max. Unit Condition
Output Frequency Range f 80.000001 220 MHz
Frequency Stability F_stab -10 +10 PPM
Inclusive of Initial tolerance at 25 C, and variations over
operating temperature, rated power supply voltage and load
-20 +20 PPM
-25 +25 PPM
-50 +50 PPM
Operating Temperature Range T_use -20 +70 C Extended Commercial
-40 +85 C Industrial
Supply Voltage Vdd 1.71 1.8 1.89 V Supply voltages between 2.5V and 3.3V can be supported.
Contact SiTime for guaranteed performance specs for supply
2.25 2.5 2.75 V
voltages not specified in this table.
2.52 2.8 3.08 V
2.97 3.3 3.63 V
Current Consumption Idd 34 36 mA No load condition, f = 100 MHz, Vdd = 2.5V, 2.8V or 3.3V
30 33 mA No load condition, f = 100 MHz, Vdd = 1.8V
OE Disable Current I_OD 31 mA Vdd = 2.5V, 2.8V or 3.3V, OE = GND, output is Weakly Pulled
Down
30 mA Vdd = 1.8 V. OE = GND, output is Weakly Pulled Down
Standby Current I_std 70 A Vdd = 2.5V, 2.8V or 3.3V, ST = GND, output is Weakly Pulled
Down
10 A Vdd = 1.8 V. ST = GND, output is Weakly Pulled Down
Duty Cycle DC 45 55 % f <= 165 MHz, all Vdds.
40 60 % f > 165 MHz, all Vdds.
Rise/Fall Time Tr, Tf 1.2 2 ns 15 pF load, 10% - 90% Vdd
Output Voltage High VOH 90% Vdd IOH = -6 mA, IOL = 6 mA, (Vdd = 3.3V, 2.8V, 2.5V)
IOH = -3 mA, IOL = 3 mA, (Vdd = 1.8V)
Output Voltage Low VOL 10% Vdd
Input Voltage High VIH 70% Vdd Pin 1, OE or ST
Input Voltage Low VIL 30% Vdd Pin 1, OE or ST
Input Pull-up Impedance Z_in 100 250 k Pin 1, OE logic high or logic low, or ST logic high
2 M Pin 1, ST logic low
Startup Time T_start 7 10 ms Measured from the time Vdd reaches its rated minimum value
OE Enable/Disable Time T_oe 115 ns f = 80 MHz, For other frequencies, T_oe = 100 ns + 3 cycles
Resume Time T_resume 10 ms In standby mode, measured from the time ST pin crosses
50% threshold. Refer to Figure 5.
RMS Period Jitter T_jitt 1.5 2 ps f = 156.25 MHz, Vdd = 2.5V, 2.8V or 3.3V
2 3 ps f = 156.25 MHz, Vdd = 1.8V
RMS Phase Jitter (random) T_phj 0.5 1 ps f = 156.25 MHz, Integration bandwidth = 12 kHz to 20 MHz
First year Aging F_aging -1.5 +1.5 PPM 25C
10-year Aging -5 +5 PPM 25C
Note:
1. All electrical specifications in the above table are specified with 15 pF 10% output load and for all Vdd(s) unless otherwise stated.
2. Contact SiTime for custom drive strength to drive higher or multiple load, or SoftEdge option for EMI reduction.
SiTime Corporation 990 Almanor Avenue Sunnyvale, CA 94085 (408) 328-4400 www.sitime.com
Rev. 1.0 Revised August 3, 2012SiT8209
High Frequency, Ultra Performance Oscillator
The Smart Timing Choice
The Smart Timing Choice
Pin Configuration
Pin Symbol Functionality
Top View
[3]
Output H or Open : specified frequency output
Enable L: output is high impedance. Only output driver is disabled.
1 4
OE/ST VDD
[3]
1 OE/ ST
H or Open : specified frequency output
Standby
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
2 GND Power Electrical ground
2 3
GND OUT
3 OUT Output Oscillator output
4 VDD Power Power supply voltage
Note:
3. A pull-up resistor of <10 k between OE/ ST pin and Vdd is recommended in high noise environment
Absolute Maximum
Attempted operation outside the absolute maximum ratings of the part may cause permanent damage to the part. Actual perfor-
mance of the IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter Min. Max. Unit
Storage Temperature -65 150 C
VDD -0.5 4 V
Electrostatic Discharge 2000 V
Soldering Temperature (follow standard Pb free soldering guidelines) 260 C
Thermal Consideration
JA, 4 Layer Board JA, 2 Layer Board JC, Bottom
Package (C/W) (C/W) (C/W)
7050 191 263 30
5032 97 199 24
3225 109 212 27
2520 117 222 26
Environmental Compliance
Parameter Condition/Test Method
Mechanical Shock MIL-STD-883F, Method 2002
Mechanical Vibration MIL-STD-883F, Method 2007
Temperature Cycle JESD22, Method A104
Solderability MIL-STD-883F, Method 2003
Moisture Sensitivity Level MSL1 @ 260C
Rev. 1.0 Page 2 of 7 www.sitime.com