Product Information

S34ML01G100BHI000

S34ML01G100BHI000 electronic component of SkyHigh Memory

Datasheet
NAND Flash 1Gb 3V 25ns NAND Flash
Manufacturer: SkyHigh Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1

MOQ : 210
Multiples : 210

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S34ML01G100BHI000
SkyHigh Memory

210 : USD 4.7236
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

S34ML01G100BHI000
SkyHigh Memory

1 : USD 2.5569
10 : USD 2.504
25 : USD 2.4511
50 : USD 2.3982
100 : USD 2.3453
500 : USD 2.2924
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

S34ML01G100BHI000
SkyHigh Memory

1 : USD 6.9967
10 : USD 6.1251
30 : USD 5.9645
100 : USD 5.8038
500 : USD 5.7332
1000 : USD 5.643
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

S34ML01G100BHI000
SkyHigh Memory

1 : USD 5.014
10 : USD 4.623
25 : USD 4.577
100 : USD 4.117
210 : USD 4.094
420 : USD 3.887
2520 : USD 3.8525
5040 : USD 3.841
N/A

Obsolete
0 - WHS 5

MOQ : 210
Multiples : 210

Stock Image

S34ML01G100BHI000
SkyHigh Memory

210 : USD 1.681
5040 : USD 1.5816
N/A

Obsolete

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Additional Infomation About Product

Spansion, Inc andCypress Semiconductor Corp have merged together to deliver high-performance, high-quality solutions at the heart of today s most advanced embedded systems, from automotive, industrial and networking platforms to highly interactive consumer and mobile devices. The new company Cypress Semiconductor Corp will continue to offerSpansion, Inc products to new and existing customers. Continuity of Specifications There is no change to this document as a result of offering the device as a Cypress product. Any changes that have been made are the result of normal document improvements and are noted in the document history page, where supported. Future revisions will occur when appropriate, and changes will be noted in a document history page. Continuity of Ordering Part Numbers Cypress continues to support existing part numbers. To order these products, please use only the Ordering Part Numbers listed in this document. For More Information Please contact your local sales office for additional information about Cypress products and solutions.S34ML01G1, S34ML02G1, S34ML04G1 1 Gbit, 2 Gbit, 4 Gbit, 3 V SLC NAND Flash for Embedded Distinctive Characteristics Density NAND Flash Interface 1 Gbit / 2 Gbit / 4 Gbit Open NAND Flash Interface (ONFI) 1.0 compliant Address, Data and Commands multiplexed Architecture Input / Output Bus Width: 8-bits / 16-bits Supply Voltage Page Size: 3.3V device: Vcc = 2.7V ~ 3.6V x8 = 2112 (2048 + 64) bytes 64 bytes is spare area Security x16 = 1056 (1024 + 32) words 32 words is spare area One Time Programmable (OTP) area Block Size: 64 Pages Hardware program/erase disabled during power transition x8 = 128k + 4k bytes Additional Features x16 = 64k + 2k words 2 Gb and 4 Gb parts support Multiplane Program and Erase Plane Size: commands 1 Gbit / 2 Gbit: 1024 Blocks per Plane Supports Copy Back Program x8 = 128M + 4M bytes 2 Gb and 4 Gb parts support Multiplane Copy Back Program x16 = 64M + 2M words Supports Read Cache 4 Gbit: 2048 Blocks per Plane Electronic Signature x8 = 256M + 8M bytes Manufacturer ID: 01h x16 = 128M + 4M words Device Size: Operating Temperature 1 Gbit: 1 Plane per Device or 128 Mbyte Industrial: -40C to 85C 2 Gbit: 2 Planes per Device or 256 Mbyte Automotive: -40C to 105C 4 Gbit: 2 Planes per Device or 512 Mbyte Performance Page Read / Program Reliability Random access: 25 s (Max) 100,000 Program / Erase cycles (Typ) (with 1 bit ECC per 528 bytes (x8) or 264 words (x16)) Sequential access: 25 ns (Min) 10 Year Data retention (Typ) Program time / Multiplane Program time: 200 s (Typ) Blocks zero and one are valid and will be valid for at least 1000 Block Erase (S34ML01G1) program-erase cycles with ECC Block Erase time: 2.0 ms (Typ) Package Options Block Erase / Multiplane Erase (S34ML02G1, S34ML04G1) Lead Free and Low Halogen Block Erase time: 3.5 ms (Typ) 48-Pin TSOP 12 x 20 x 1.2 mm 63-Ball BGA 9 x 11 x 1 mm Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00676 Rev. *Q Revised November 02, 2015

HS Compliance

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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