S34ML08G101BHB000 SkyHigh Memory

S34ML08G101BHB000 electronic component of SkyHigh Memory
S34ML08G101BHB000 SkyHigh Memory
S34ML08G101BHB000 NAND Flash
S34ML08G101BHB000  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of S34ML08G101BHB000 NAND Flash across the USA, India, Europe, Australia, and various other global locations. S34ML08G101BHB000 NAND Flash are a product manufactured by SkyHigh Memory. We provide cost-effective solutions for NAND Flash, ensuring timely deliveries around the world.

Part No. S34ML08G101BHB000
Manufacturer: SkyHigh Memory
Category: NAND Flash
Description: Flash Memory Nand
256MB DDR SDRAM SODIMM Memory Module with 184 pins.
Datasheet: S34ML08G101BHB000 Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 210
Multiples : 210
QtyUnit Price
210$ 12.7507
420$ 12.6275
N/A

Obsolete
   
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We are delighted to provide the S34ML08G101BHB000 from our NAND Flash category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the S34ML08G101BHB000 and other electronic components in the NAND Flash category and beyond.

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The S34ML08G101BHB000 from SK Hynix is a 8GB (13G and 8G) DDR4 NVDIMM-N Non-Volatile Memory Module. It is compliant with the JEDEC DDR4-2933 standard, is an SST (Single Sided DIMM), and is a 3DS (Three Dimensional Stacked) Flash device. This memory module has a power-managed feature that enables the storage system to preserve data during a power failure. It has a non-volatile latency of 8 to 10 seconds write while the read latency is 1 second or less. It also has a cycle endurance of up to 8.8 million write cycles. This memory module is ideal for applications that require quick, error-free recovery of data after a power failure.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
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