S34ML08G201BHI000

S34ML08G2 8 Gb, 4-bit ECC, x8 I/O and 3 V VCC NAND Flash Memory for Embedded Distinctive Characteristics Density Security 8 Gb (4 Gb x 2) One Time Programmable (OTP) area Serial number (unique ID) Architecture (For each 4 Gb device) Hardware program/erase disabled during power transition Input / Output Bus Width: 8-bits Page Size: (2048 + 128) bytes; 128-byte spare area Additional Features Block Size: 64 Pages or (128k + 8k) bytes Supports Multiplane Program and Erase commands Plane Size Supports Copy Back Program 2048 Blocks per Plane or (256M + 16M) bytes Supports Multiplane Copy Back Program Device Size Supports Read Cache 2 Planes per Device or 512 Mbyte Electronic Signature NAND Flash Interface Manufacturer ID: 01h Open NAND Flash Interface (ONFI) 1.0 compliant Operating Temperature Address, Data and Commands multiplexed Industrial: -40C to 85C Supply Voltage industrial Plus: -40C to 105C 3.3V device: Vcc = 2.7V ~ 3.6V Performance Page Read / Program Reliability Random access: 30 s (Max) 100,000 Program / Erase cycles (Typ) (with 4-bit ECC per 528 bytes) Sequential access: 25 ns (Min) 10 Year Data retention (Typ) Program time / Multiplane Program time: 300 s (Typ) Blocks zero and one are valid and will be valid for at least 1000 Block Erase / Multiplane Erase program-erase cycles with ECC Block Erase time: 3.5 ms (Typ) Package Options Lead Free and Low Halogen 48-Pin TSOP 12 x 20 x 1.2 mm 63-Ball BGA 11 x 9 x 1 mm Cypress Semiconductor Corporation 198 Champion Court San Jose, CA 95134-1709 408-943-2600 Document Number: 002-00484 Rev. *F Revised Monday, April 25, 2016S34ML08G2 Contents Distinctive Characteristics .................................................. 1 Performance.......................................................................... 1 1. General Description..................................................... 3 2. Connection Diagram.................................................... 3 3. Pin Description............................................................. 4 4. Block Diagrams............................................................ 5 5. Addressing ................................................................... 6 6. Read Status Enhanced ................................................ 7 7. Read ID.......................................................................... 7 7.1 Read Parameter Page ................................................... 8 8. Electrical Characteristics.......................................... 10 8.1 Valid Blocks ................................................................. 10 8.2 Recommended Operating Conditions.......................... 10 8.3 DC Characteristics....................................................... 11 8.4 Pin Capacitance........................................................... 11 8.5 Power Consumptions and Pin Capacitance for Allowed Stacking Configurations............................................... 11 9. Physical Interface ...................................................... 12 9.1 Physical Diagram......................................................... 12 10. Ordering Information................................................. 14 11. Document History...................................................... 15 Document Number: 002-00484 Rev. *F Page 2 of 16