MJ11015 (PNP) MJ11012, MJ11016 (NPN) MJ11016 is a Preferred Device High-Current Complementary Silicon Transistors MJ11015 (PNP) MJ11012, MJ11016 (NPN) COLLECTOR COLLECTOR PNP NPN MJ11015 MJ11012 MJ11016 BASE BASE 8.0 k 40 8.0 k 40 EMITTER EMITTER Figure 1. Darlington Circuit Schematic ELECTRICAL CHARACTERISTICS (T = 25 C unless otherwise noted.) C Characteristics Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Breakdown Voltage(1) V Vdc (BR)CEO (I = 100 mAdc, I = 0) MJ11012 60 C B MJ11015, MJ11016 120 CollectorEmitter Leakage Current I mAdc CER (V = 60 Vdc, R = 1k ohm) MJ11012 1 CE BE (V = 120 Vdc, R = 1k ohm) MJ11015, MJ11016 1 CE BE (V = 60 Vdc, R = 1k ohm, T = 150 C) MJ11012 5 CE BE C (V = 120 Vdc, R = 1k ohm, T = 150 C) MJ11015, MJ11016 5 CE BE C Emitter Cutoff Current I 5 mAdc EBO (V = 5 Vdc, I = 0) BE C CollectorEmitter Leakage Current I 1 mAdc CEO (V = 50 Vdc, I = 0) CE B ON CHARACTERISTICS(1) DC Current Gain h FE (I = 20 Adc,V = 5 Vdc) 1000 C CE (I = 30 Adc, V = 5 Vdc) 200 C CE CollectorEmitter Saturation Voltage V Vdc CE(sat) (I = 20 Adc, I = 200 mAdc) 3 C B (I = 30 Adc, I = 300 mAdc) 4 C B BaseEmitter Saturation Voltage V Vdc BE(sat) (I = 20 A, I = 200 mAdc) 3.5 C B (I = 30 A, I = 300 mAdc) 5 C B DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product h 4 MHz fe (I = 10 A, V = 3 Vdc, f = 1 MHz) C CE (1) Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%.