ESM3030DV STMicroelectronics

ESM3030DV NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R JUNCTION CASE th SPECIFIED ACCIDENTAL OVERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: MOTOR CONTROL SMPS & UPS DC/DC & DC/AC CONVERTERS ISOTOP WELDING EQUIPMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V Collector-Emitter Voltage (V = -5 V) 400 V CEV BE V Collector-Emitter Voltage (I = 0) 300 V CEO(sus) B V Emitter-Base Voltage (I = 0) 7 V EBO C I Collector Current 100 A C I Collector Peak Current (t = 10 ms) 150 A CM p I Base Current 5 A B I Base Peak Current (t = 10 ms) 10 A BM p o P Total Dissipation at T = 25 C 225 W tot c V Insulation Withstand Voltage (RMS) from All 2500 V isol Four Terminals to Exernal Heatsink o T Storage Temperature -55 to 150 C stg o T Max. Operating Junction Temperature 150 C j 1/8 September 2003 ESM3030DV THERMAL DATA o R Thermal Resistance Junction-case (transistor) Max 0.55 C/W thj-case o R Thermal Resistance Junction-case (diode) Max 1.2 C/W thj-case R Thermal Resistance Case-heatsink With Conductive thc-h o Grease Applied Max 0.05 C/W o ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off VCE = VCEV 1.5 mA o V = V T = 100 C 16 mA Current (R = 5 ) CE CEV j BE I Collector Cut-off V = V 1 mA CEV CE CEV o Current (V = -5) V = V T = 100 C 11 mA BE CE CEV j I Emitter Cut-off Current V = 5 V 1 mA EBO EB (IC = 0) V * Collector-Emitter I = 0.2 A L = 25 mH 300 V CEO(SUS) C Sustaining Voltage V = 300 V clamp (I = 0) B h * DC Current Gain I = 85 A V = 5 V 300 FE C CE V * Collector-Emitter I = 60 A I = 0.6 A 1.25 V CE(sat) C B o Saturation Voltage I = 60 A I = 0.6 A T = 100 C 1.4 1.8 V C B j I = 85 A I = 2.4 A 1.5 V C B o I = 85 A I = 2.4 A T = 100 C 1.8 2.2 V C B j V * Base-Emitter I = 85 A I = 2.4 A 2.4 V BE(sat) C B o Saturation Voltage IC = 85 A IB = 2.4 A Tj = 100 C 2.5 3 V diC/dt Rate of Rise of V = 300 V R = 0 t = 3 s 330 430 A/s CC C p o On-state Collector I = 0.9 A T = 100 C B1 j VCE(3 Collector-Emitter V = 300 V R = 5 36 V CC C o s) Dynamic Voltage I = 0.9 A T = 100 C B1 j V (5 Collector-Emitter 2.2 4 V CE V = 300 V R = 5 CC C o s) Dynamic Voltage I = 0.9 A T = 100 C B1 j t Storage Time I = 60 A V = 50 V 2.3 3.5 s s C CC t Fall Time 0.35 0.6 s f V = -5 V R = 0.6 BB BB t Cross-over Time 0.8 1.2 s c Vclamp = 300 V IB1 = 0.6 A o L = 0.04 mH T = 100 C j V Maximum Collector I = 100 A I = 2.4 A 300 V CEW CWoff B1 Emitter Voltage V = -5 V V = 50 V BB CC Without Snubber L = 25 H RBB = 0.6 o T = 125 C j o V * Diode Forward Voltage I = 85 A T = 100 C 1.2 1.55 V F F j I Reverse Recovery V = 200 V I = 85 A 18 25 A RM CC F Current di /dt = -330 A/s L < 50 nH F o T = 100 C j * Pulsed: Pulse duration = 300 s, duty cycle 1.5 % See test circuits in databook introduction To evaluate the conduction losses of the diode use the following equations: 2 VF =1.1 + 0.0045 IF P = 1.1 IF(AV) + 0.0045 I F(RMS) 2/8