Product Information

SM3400SRL

SM3400SRL electronic component of SPS

Datasheet
MOSFET N Trench 30V 5.8A 1.4V @ 250uA 28 mΩ @ 5.8A,10V SOT-23 (SOT-23-3) RoHS
Manufacturer: SPS
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0988 ea
Line Total: USD 0.99

21534 - Global Stock
Ships to you between
Thu. 30 May to Tue. 04 Jun
MOQ: 10  Multiples: 10
Pack Size: 10

 More Buying Options & Price Grid(s)

Availability Price Quantity
6857 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 10
Multiples : 10
10 : USD 0.0949
100 : USD 0.0787
300 : USD 0.0707
3000 : USD 0.0579
6000 : USD 0.053
9000 : USD 0.0506

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The SPS SM3400SRL is a low-profile Trench MOSFET N-channel device designed to handle a wide range of switching and amplification needs. This highly reliable and cost-effective part offers an impressive combination of rugged power performance and low on-resistance in a compact 3-pin SOT-23 package.It has an operating voltage range of 30V with a maximum continuous drain current of 5.8A. Its on-resistance of 28 mO is guaranteed at a drain current of 5.8A, 10V. The maximum drain source voltage is 30V, while the maximum gate source voltage is 1.4V at a gate current of 250uA.The SPS SM3400SRL is a RoHS-compliant device and is sourced from SPS, a leading manufacturer of high-performance transistor technologies.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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