Product Information

1.5KE43A

1.5KE43A electronic component of STMicroelectronics

Datasheet
Diode, TVS 1.5KW 43V

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.4672 ea
Line Total: USD 2.34

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 15 May to Tue. 21 May

MOQ : 5
Multiples : 1

Stock Image

1.5KE43A
STMicroelectronics

5 : USD 0.4672
100 : USD 0.312
500 : USD 0.2437

     
Manufacturer
Product Category
Breakdown Voltage
Brand
Product Range
Tvs Polarity
Reverse Stand-Off Voltage Vrwm
Clamping Voltage Vc Max
Diode Case Style
No. Of Pins
Breakdown Voltage Min
Breakdown Voltage Max
Peak Pulse Power Dissipation
Svhc
Body Diameter
Breakdown Voltage Range
Breakover Voltage Min
Clamping Voltage @ 8/20 S Max
Current Ir Max
Current Ir Vbr Measurement Min
Current Itsm
Diode Type
External Length / Height
Forward Surge Current Ifsm Max
Full Power Rating Temperature
Jedec Number
Lead Diameter
Peak Pulse Current Ippm
Power Dissipation Pd
Power Dissipation Ptot Max
Repetitive Reverse Voltage Vrrm Max
Reverse Leakage Current Max
Stand-Off Voltage
Uni / Bi Directional Polarity
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1.5KE Transil Datasheet production data Features Peak pulse power: 1500 W (10/1000 s) A Breakdown voltage range: From 6.8 V to 440 V Uni and bidirectional types K Low clamping factor Fast response time UL 497B file number: QVGQ2.E136224 DO-201 Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. TM:Transil is a trademarks of STMicroelectronics. March 2012 Doc ID 2913 Rev 4 1/10 This is information on a product in full production. www.st.com 10Characteristics 1.5KE 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T = T 1500 W PP j initial amb P Power dissipation on infinite heatsink T = 75 C 5 W amb t = 10 ms Non repetitive surge peak forward current for unidirectional p I 200 A FSM types T = T j initial amb T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j T Maximum lead temperature for soldering during 10s at 5mm from case. 230 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal parameter Symbol Parameter Value Unit R Junction to leads 20 th(j-l) C/W R Junction to ambient on printed circuit. L = 10 mm 75 th(j-a) lead Figure 1. Electrical characteristics - definitions II II II II FF PPPP V Stand-off voltage RM V Breakdown voltage Unidirectional BR V Clamping voltage CL I Leakage current V RM RM II I Peak pulse current PP RR VV VV VV VV FF VV VV VV VV I Breakdown current CLCL BRBR RMRM VV R CLCL BRBR RMRM II RMRM T Voltage temperature II RMRM II coefficient RMRM VV VV VV RMRM BRBR CLCL II V Forward voltage drop F RR II RR R Dynamic impedance D Bidirectional II PPPP II PPPP 2/10 Doc ID 2913 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
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ST MICROELECTRONICS
ST2
ST7
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STMICRELECTRONICS
STN

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