Product Information

1.5KE62ARL

1.5KE62ARL electronic component of STMicroelectronics

Datasheet
TRANSIL 1500W 62V UNIDIR DO-201

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1900: USD 0.5323 ea
Line Total: USD 1011.37

0 - Global Stock
MOQ: 1900  Multiples: 1900
Pack Size: 1900
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

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1.5KE62ARL
STMicroelectronics

1 : USD 1.1681
10 : USD 1.0055
100 : USD 0.7836
500 : USD 0.6473

0 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1900
Multiples : 1900

Stock Image

1.5KE62ARL
STMicroelectronics

1900 : USD 0.5323
3800 : USD 0.477
5700 : USD 0.4531
13300 : USD 0.4361

     
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1.5KE Transil Datasheet production data Features Peak pulse power: 1500 W (10/1000 s) A Breakdown voltage range: From 6.8 V to 440 V Uni and bidirectional types K Low clamping factor Fast response time UL 497B file number: QVGQ2.E136224 DO-201 Description Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied ICs. TM:Transil is a trademarks of STMicroelectronics. March 2012 Doc ID 2913 Rev 4 1/10 This is information on a product in full production. www.st.com 10Characteristics 1.5KE 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit (1) P Peak pulse power dissipation T = T 1500 W PP j initial amb P Power dissipation on infinite heatsink T = 75 C 5 W amb t = 10 ms Non repetitive surge peak forward current for unidirectional p I 200 A FSM types T = T j initial amb T Storage temperature range -65 to + 175 C stg T Maximum operating junction temperature 175 C j T Maximum lead temperature for soldering during 10s at 5mm from case. 230 C L 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal parameter Symbol Parameter Value Unit R Junction to leads 20 th(j-l) C/W R Junction to ambient on printed circuit. L = 10 mm 75 th(j-a) lead Figure 1. Electrical characteristics - definitions II II II II FF PPPP V Stand-off voltage RM V Breakdown voltage Unidirectional BR V Clamping voltage CL I Leakage current V RM RM II I Peak pulse current PP RR VV VV VV VV FF VV VV VV VV I Breakdown current CLCL BRBR RMRM VV R CLCL BRBR RMRM II RMRM T Voltage temperature II RMRM II coefficient RMRM VV VV VV RMRM BRBR CLCL II V Forward voltage drop F RR II RR R Dynamic impedance D Bidirectional II PPPP II PPPP 2/10 Doc ID 2913 Rev 4

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
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