408962XB STMicroelectronics

1N6263 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high break- down, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detec- tion and pulse application with broad dynamic range. DO-35 ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V Repetitive Peak Reverse Voltage 60 V RRM I Forward Continuous Current* T = 25C 15 mA F a I Surge non Repetitive Forward Current* t 1s 50 mA FSM p T Storage and Junction Temperature Range - 65 to 200 C stg T - 65 to 200 j T Maximum Lead Temperature for Soldering during 10s at 4mm 230 C L from Case THERMAL RESISTANCE Symbol Test Conditions Value Unit R th(j-a) Junction-ambient* 400 C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit V T = 25C I = 10A 60 V BR amb R V * * T = 25CI = 1mA 0.41 V F amb F T = 25CI = 15mA 1 amb F I * * R T = 25CV = 50V 0.2 A amb R DYNAMIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit CT = 25C V = 0V f = 1MHz 2.2 pF amb R T = 25CI = 5mA Krakauer Method 100 ps amb F * On infinite heatsink with 4mm lead length ** Pulse test: t 300s < 2%. p Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. October 2001 - Ed: 1B 1/31N6263 Fig. 1: Forward current versus forward voltage Fig. 2: Capacitance C versus reverse applied (typical values). voltage V (typical values). R Fig. 3: Reverse current versus ambient tempera- Fig. 4: Reverse current versus continuous re- ture. verse voltage (typical values). 2/3